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Physical Review Letters|October 4, 2000
New mechanism for dislocation blocking in strained layer epitaxial growthStach, Schwarz, Hull, et al.Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada|December 16, 1998
In Situ Studies of the Interaction of Dislocations with Point Defects during Annealing of Ion Implanted Si/SiGe/Si (001) HeterostructuresStach, Hull, Bean, et al.Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada|December 16, 1998
Applications of Ion Microscopy and In Situ Electron Microscopy to the Study of Electronic Materials and DevicesHull, Demarest, Dunn, et al.Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada|December 16, 1998
Ostwald Ripening of Self-Assembled Germanium Islands on Silicon(100)Ross, Tersoff, TrompScience (New York, N.Y.)|December 3, 1999
Transition States Between Pyramids and Domes During Ge/Si Island GrowthRoss, Tromp, ReuterNature Materials|July 23, 2003
Dynamic microscopy of nanoscale cluster growth at the solid-liquid interfaceM J Williamson, R M Tromp, P M Vereecken, et al.Nature|February 3, 2006
The influence of the surface migration of gold on the growth of silicon nanowiresJ B Hannon, S Kodambaka, F M Ross, et al.Nano Letters|June 15, 2006
Control of Si nanowire growth by oxygenSuneel Kodambaka, James B Hannon, Rudolf M Tromp, et al.Emotion (Washington, D.C.)|March 31, 2017
Measuring emotional and cognitive empathy using dynamic, naturalistic, and spontaneous emotion displaysRoss Buck, Stacie R Powers, Kyle S HullPageof 10,250