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ACS Applied Materials & Interfaces|November 22, 2021
A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive DevicesNils Kopperberg, Stefan Wiefels, Sergej Liberda, et al.
ACS Applied Materials & Interfaces|May 17, 2017
Interfacial Metal-Oxide Interactions in Resistive Switching MemoriesDeok-Yong Cho, Michael Luebben, Stefan Wiefels, et al.
Nanoscale Horizons|March 21, 2024
Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devicesPascal Stasner, Nils Kopperberg, Kristoffer Schnieders, et al.
Materials (Basel, Switzerland)|October 29, 2025
The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory DevicesAbbas Espiari, Henriette Padberg, Alexander Kiehn, et al.
ACS Nano|November 3, 2021
Standards for the Characterization of Endurance in Resistive Switching DevicesMario Lanza, Rainer Waser, Daniele Ielmini, et al.
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