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Angewandte Chemie (International Ed. in English)
|
March 14, 2023
Structure and Bonding in Amorphous Red Phosphorus
Yuxing Zhou, Stephen R Elliott, Volker L Deringer
Nanotechnology
|
October 1, 2014
Nanomechanical gas sensing with nonlinear resonant cantilevers
Warner J Venstra, Matthew J Capener, Stephen R Elliott
Die Naturwissenschaften
|
January 26, 2007
Establishment of facultative sexuals
Chris J Paley, Sergei N Taraskin, Stephen R Elliott
Nanoscale
|
November 22, 2019
Temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon: a first-principles study
Parthapratim Biswas, Durga Paudel, Raymond Atta-Fynn, et al.
ACS Applied Materials & Interfaces
|
June 5, 2015
Ab Initio Molecular-Dynamics Simulation of Neuromorphic Computing in Phase-Change Memory Materials
Jonathan M Skelton, Desmond Loke, Taehoon Lee, et al.
Proceedings of the National Academy of Sciences of the United States of America
|
May 9, 2018
Origin of radiation tolerance in amorphous Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> phase-change random-access memory material
Konstantinos Konstantinou, Tae Hoon Lee, Felix C Mocanu, et al.
Talanta
|
May 8, 2016
Estimation of semiconductor-like pigment concentrations in paint mixtures and their differentiation from paint layers using first-derivative reflectance spectra
Anuradha R Pallipurath, Jonathan M Skelton, Paola Ricciardi, et al.
ACS Applied Materials & Interfaces
|
December 22, 2016
Design of a Nanoscale, CMOS-Integrable, Thermal-Guiding Structure for Boolean-Logic and Neuromorphic Computation
Desmond Loke, Jonathan M Skelton, Tow-Chong Chong, et al.
Langmuir : the ACS Journal of Surfaces and Colloids
|
May 31, 2011
Study of thioflavin-T immobilized in porous silicon and the effect of different organic vapors on the fluorescence lifetime
Tanya Hutter, Nadav Amdursky, Rinat Gepshtein, et al.
Nature Communications
|
July 13, 2019
Revealing the intrinsic nature of the mid-gap defects in amorphous Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>
Konstantinos Konstantinou, Felix C Mocanu, Tae-Hoon Lee, et al.
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Search research articles
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Showing results (11-20 of 54) with videos related to
Sort By:
Page
of 6
Angewandte Chemie (International Ed. in English)
|
March 14, 2023
Structure and Bonding in Amorphous Red Phosphorus
Yuxing Zhou, Stephen R Elliott, Volker L Deringer
Nanotechnology
|
October 1, 2014
Nanomechanical gas sensing with nonlinear resonant cantilevers
Warner J Venstra, Matthew J Capener, Stephen R Elliott
Die Naturwissenschaften
|
January 26, 2007
Establishment of facultative sexuals
Chris J Paley, Sergei N Taraskin, Stephen R Elliott
Nanoscale
|
November 22, 2019
Temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon: a first-principles study
Parthapratim Biswas, Durga Paudel, Raymond Atta-Fynn, et al.
ACS Applied Materials & Interfaces
|
June 5, 2015
Ab Initio Molecular-Dynamics Simulation of Neuromorphic Computing in Phase-Change Memory Materials
Jonathan M Skelton, Desmond Loke, Taehoon Lee, et al.
Proceedings of the National Academy of Sciences of the United States of America
|
May 9, 2018
Origin of radiation tolerance in amorphous Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> phase-change random-access memory material
Konstantinos Konstantinou, Tae Hoon Lee, Felix C Mocanu, et al.
Talanta
|
May 8, 2016
Estimation of semiconductor-like pigment concentrations in paint mixtures and their differentiation from paint layers using first-derivative reflectance spectra
Anuradha R Pallipurath, Jonathan M Skelton, Paola Ricciardi, et al.
ACS Applied Materials & Interfaces
|
December 22, 2016
Design of a Nanoscale, CMOS-Integrable, Thermal-Guiding Structure for Boolean-Logic and Neuromorphic Computation
Desmond Loke, Jonathan M Skelton, Tow-Chong Chong, et al.
Langmuir : the ACS Journal of Surfaces and Colloids
|
May 31, 2011
Study of thioflavin-T immobilized in porous silicon and the effect of different organic vapors on the fluorescence lifetime
Tanya Hutter, Nadav Amdursky, Rinat Gepshtein, et al.
Nature Communications
|
July 13, 2019
Revealing the intrinsic nature of the mid-gap defects in amorphous Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>
Konstantinos Konstantinou, Felix C Mocanu, Tae-Hoon Lee, et al.
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of 6