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Nanomaterials (Basel, Switzerland)|February 25, 2023
Selected Area Deposition of High Purity Gold for Functional 3D ArchitecturesJohn Lasseter, Philip D Rack, Steven J Randolph
Nanotechnology|July 7, 2011
In situ probing of the growth and morphology in electron-beam-induced deposited nanostructuresPhilip D Rack, Jason D Fowlkes, Steven J Randolph
Nanomaterials (Basel, Switzerland)|February 26, 2026
Reactive Oxygen Ion Beam-Induced Deposition for Concurrent Purification of Platinum NanostructuresKyle Sprecker, Sujoy Ghosh, Philip D Rack, et al.
Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada|March 5, 2014
Liquid phase electron-beam-induced deposition on bulk substrates using environmental scanning electron microscopyMatthew Bresin, Aurelien Botman, Steven J Randolph, et al.
Nanoscale Horizons|November 22, 2024
XeF2 gas assisted focused electron beam induced etching of niobium thin films: towards direct write editing of niobium superconducting devicesSpencer Gellerup, Reece Emery, Scott T Retterer, et al.
Scanning|December 22, 2006
Pressure effect of growing with electron beam-induced deposition with tungsten hexafluoride and tetraethylorthosilicate precursorYoung R Choi, Philip D Rack, Steven J Randolph, et al.
Nanoscale|October 14, 2016
Robust, directed assembly of fluorescent nanodiamondsMehran Kianinia, Olga Shimoni, Avi Bendavid, et al.
ACS Applied Materials & Interfaces|March 3, 2026
Leveraging Combinatorial Sputtering to Investigate Ferroelectric Properties of the HfxZr1-xO2 SystemMatthew Flynn-Hepford, Kyle Sprecker, Saban M Hus, et al.
ACS Applied Materials & Interfaces|February 12, 2024
Selected Area Manipulation of MoS2 via Focused Electron Beam-Induced Etching for Nanoscale Device EditingJohn Lasseter, Spencer Gellerup, Sujoy Ghosh, et al.
Iscience|December 13, 2021
Cryogenic electron microscopy reveals that applied pressure promotes short circuits in Li batteriesKatharine L Harrison, Laura C Merrill, Daniel Martin Long, et al.
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