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Steven W Johnston

Showing results (1-10 of 9) with videos related to

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Nanoscale Advances|September 22, 2025
Heavy boron doping effects on biaxially tensile strained germanium (>1.5%) investigated <i>via</i> structural characterization, effective lifetime assessment and atomistic modelingShuvodip Bhattacharya, Steven W Johnston, Mantu K Hudait
The Review of Scientific Instruments|April 8, 2010
Measuring temperature-dependent activation energy in thermally activated processes: a 2D Arrhenius plot methodJian V Li, Steven W Johnston, Yanfa Yan, et al.
ACS Applied Electronic Materials|July 1, 2024
Elucidating the Role of InGaAs and InAlAs Buffers on Carrier Dynamics of Tensile-Strained Ge Double HeterostructuresShuvodip Bhattacharya, Steven W Johnston, Robert J Bodnar, et al.
ACS Applied Electronic Materials|December 1, 2025
Impact of Arsenic- and Indium-Terminated InGaAs Stressors on Carrier Confinement, Strain, Defects, and Transport Properties of Tensile-Strained GeSengunthar Karthikeyan, Rishav Khatiwada, Jean J Heremans, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|June 3, 2024
Investigation of Sub-Bandgap Emission and Unexpected n-Type Behavior in Undoped Polycrystalline CdSe<sub>x</sub>Te<sub>1-x</sub>Deborah L McGott, Steven W Johnston, Chun-Sheng Jiang, et al.
Nanoscale|March 21, 2024
GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulationSengunthar Karthikeyan, Steven W Johnston, Dhammapriy Gayakwad, et al.
ACS Applied Energy Materials|March 13, 2026
Multiscale Characterization of Electrode-Induced Degradation in Perovskite Solar CellsGoutam Paul, Jackson W Schall, Harvey L Guthrey, et al.
ACS Applied Materials & Interfaces|December 18, 2024
GaAs Solar Cells Grown Directly on V-Groove Si SubstratesTheresa E Saenz, Jacob Boyer, John S Mangum, et al.
ACS Energy Letters|May 8, 2023
Temperature Coefficients of Perovskite Photovoltaics for Energy Yield CalculationsTaylor Moot, Jay B Patel, Gabriel McAndrews, et al.
Pageof 1

Showing results (1-10 of 9) with videos related to

Sort By:
Pageof 1
Nanoscale Advances|September 22, 2025
Heavy boron doping effects on biaxially tensile strained germanium (>1.5%) investigated <i>via</i> structural characterization, effective lifetime assessment and atomistic modelingShuvodip Bhattacharya, Steven W Johnston, Mantu K Hudait
The Review of Scientific Instruments|April 8, 2010
Measuring temperature-dependent activation energy in thermally activated processes: a 2D Arrhenius plot methodJian V Li, Steven W Johnston, Yanfa Yan, et al.
ACS Applied Electronic Materials|July 1, 2024
Elucidating the Role of InGaAs and InAlAs Buffers on Carrier Dynamics of Tensile-Strained Ge Double HeterostructuresShuvodip Bhattacharya, Steven W Johnston, Robert J Bodnar, et al.
ACS Applied Electronic Materials|December 1, 2025
Impact of Arsenic- and Indium-Terminated InGaAs Stressors on Carrier Confinement, Strain, Defects, and Transport Properties of Tensile-Strained GeSengunthar Karthikeyan, Rishav Khatiwada, Jean J Heremans, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|June 3, 2024
Investigation of Sub-Bandgap Emission and Unexpected n-Type Behavior in Undoped Polycrystalline CdSe<sub>x</sub>Te<sub>1-x</sub>Deborah L McGott, Steven W Johnston, Chun-Sheng Jiang, et al.
Nanoscale|March 21, 2024
GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulationSengunthar Karthikeyan, Steven W Johnston, Dhammapriy Gayakwad, et al.
ACS Applied Energy Materials|March 13, 2026
Multiscale Characterization of Electrode-Induced Degradation in Perovskite Solar CellsGoutam Paul, Jackson W Schall, Harvey L Guthrey, et al.
ACS Applied Materials & Interfaces|December 18, 2024
GaAs Solar Cells Grown Directly on V-Groove Si SubstratesTheresa E Saenz, Jacob Boyer, John S Mangum, et al.
ACS Energy Letters|May 8, 2023
Temperature Coefficients of Perovskite Photovoltaics for Energy Yield CalculationsTaylor Moot, Jay B Patel, Gabriel McAndrews, et al.
Pageof 1