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Physical Review Letters
|
May 21, 2005
Spatial chemical inhomogeneity and local electronic structure of Mn-doped Ge ferromagnetic semiconductors
J-S Kang, G Kim, S C Wi, et al.
ACS Applied Materials & Interfaces
|
December 15, 2016
Thermoelectric Properties of Indium and Gallium Dually Doped ZnO Thin Films
Nhat Hong Tran Nguyen, Truong Huu Nguyen, Yi-Ren Liu, et al.
National Science Review
|
May 20, 2022
High-performance polarization-sensitive photodetectors on two-dimensional <i>β</i>-InSe
Zhinan Guo, Rui Cao, Huide Wang, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
October 22, 2022
Atomic Layer Deposition of Sb<sub>2</sub> Te<sub>3</sub> /GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory
Chanyoung Yoo, Jeong Woo Jeon, Seungjae Yoon, et al.
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of 3
Search research articles
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Showing results (21-30 of 24) with videos related to
Sort By:
Page
of 3
You have reached the last page of results.
This site can display upto 24 results.
Physical Review Letters
|
May 21, 2005
Spatial chemical inhomogeneity and local electronic structure of Mn-doped Ge ferromagnetic semiconductors
J-S Kang, G Kim, S C Wi, et al.
ACS Applied Materials & Interfaces
|
December 15, 2016
Thermoelectric Properties of Indium and Gallium Dually Doped ZnO Thin Films
Nhat Hong Tran Nguyen, Truong Huu Nguyen, Yi-Ren Liu, et al.
National Science Review
|
May 20, 2022
High-performance polarization-sensitive photodetectors on two-dimensional <i>β</i>-InSe
Zhinan Guo, Rui Cao, Huide Wang, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
October 22, 2022
Atomic Layer Deposition of Sb<sub>2</sub> Te<sub>3</sub> /GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory
Chanyoung Yoo, Jeong Woo Jeon, Seungjae Yoon, et al.
Page
of 3