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Advanced Materials (Deerfield Beach, Fla.)|September 7, 2022
Challenges of Wafer-Scale Integration of 2D Semiconductors for High-Performance Transistor CircuitsTom Schram, Surajit Sutar, Iuliana Radu, et al.
Nanoscale|July 22, 2017
From the metal to the channel: a study of carrier injection through the metal/2D MoS<sub>2</sub> interfaceGoutham Arutchelvan, César J Lockhart de la Rosa, Philippe Matagne, et al.
Scientific Reports|July 9, 2016
Polarity control in WSe2 double-gate transistorsGiovanni V Resta, Surajit Sutar, Yashwanth Balaji, et al.
Scientific Reports|March 24, 2021
Impact of device scaling on the electrical properties of MoS<sub>2</sub> field-effect transistorsGoutham Arutchelvan, Quentin Smets, Devin Verreck, et al.
Nanotechnology|August 3, 2018
Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformityDaniele Chiappe, Jonathan Ludwig, Alessandra Leonhardt, et al.
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