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Nanomaterials (Basel, Switzerland)|May 27, 2023
Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel SystemSwagat Nanda, Rudra Sankar Dhar, Falah Awwad, et al.Nanomaterials (Basel, Switzerland)|December 8, 2023
The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel LengthPriyanka Saha, Rudra Sankar Dhar, Swagat Nanda, et al.Micromachines|January 8, 2025
Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe ChannelPotaraju Yugender, Rudra Sankar Dhar, Swagat Nanda, et al.Pageof 1