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Swee Liang Wong

Showing results (11-20 of 17) with videos related to

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Scientific Reports|August 26, 2021
Author Correction: Carrier control in 2D transition metal dichalcogenides with Al<sub>2</sub>O<sub>3</sub> dielectricChit Siong Lau, Jing Yee Chee, Dickson Thian, et al.
RSC Advances|May 11, 2022
Electronic properties of atomically thin MoS<sub>2</sub> layers grown by physical vapour deposition: band structure and energy level alignment at layer/substrate interfacesFabio Bussolotti, Jainwei Chai, Ming Yang, et al.
Scientific Reports|June 21, 2019
Carrier control in 2D transition metal dichalcogenides with Al<sub>2</sub>O<sub>3</sub> dielectricChit Siong Lau, Jing Yee Chee, Dickson Thian, et al.
ACS Nano|March 6, 2018
Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS<sub>2</sub> Field-Effect Transistors by Atomic Nitrogen TreatmentBaoshan Tang, Zhi Gen Yu, Li Huang, et al.
ACS Nano|July 27, 2019
Layer Rotation-Angle-Dependent Excitonic Absorption in van der Waals Heterostructures Revealed by Electron Energy Loss SpectroscopyPranjal Kumar Gogoi, Yung-Chang Lin, Ryosuke Senga, et al.
ACS Nano|January 18, 2018
Modification of Vapor Phase Concentrations in MoS<sub>2</sub> Growth Using a NiO Foam BarrierYee-Fun Lim, Kumar Priyadarshi, Fabio Bussolotti, et al.
ACS Nano|July 29, 2017
Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide SemiconductorZhibo Song, Thorsten Schultz, Zijing Ding, et al.
Pageof 2

Showing results (11-20 of 17) with videos related to

Sort By:
Pageof 2
You have reached the last page of results.This site can display upto 17 results.
Scientific Reports|August 26, 2021
Author Correction: Carrier control in 2D transition metal dichalcogenides with Al<sub>2</sub>O<sub>3</sub> dielectricChit Siong Lau, Jing Yee Chee, Dickson Thian, et al.
RSC Advances|May 11, 2022
Electronic properties of atomically thin MoS<sub>2</sub> layers grown by physical vapour deposition: band structure and energy level alignment at layer/substrate interfacesFabio Bussolotti, Jainwei Chai, Ming Yang, et al.
Scientific Reports|June 21, 2019
Carrier control in 2D transition metal dichalcogenides with Al<sub>2</sub>O<sub>3</sub> dielectricChit Siong Lau, Jing Yee Chee, Dickson Thian, et al.
ACS Nano|March 6, 2018
Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS<sub>2</sub> Field-Effect Transistors by Atomic Nitrogen TreatmentBaoshan Tang, Zhi Gen Yu, Li Huang, et al.
ACS Nano|July 27, 2019
Layer Rotation-Angle-Dependent Excitonic Absorption in van der Waals Heterostructures Revealed by Electron Energy Loss SpectroscopyPranjal Kumar Gogoi, Yung-Chang Lin, Ryosuke Senga, et al.
ACS Nano|January 18, 2018
Modification of Vapor Phase Concentrations in MoS<sub>2</sub> Growth Using a NiO Foam BarrierYee-Fun Lim, Kumar Priyadarshi, Fabio Bussolotti, et al.
ACS Nano|July 29, 2017
Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide SemiconductorZhibo Song, Thorsten Schultz, Zijing Ding, et al.
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