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Optics Express|February 12, 2014
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodesZabu Kyaw, Zi-Hui Zhang, Wei Liu, et al.Optics Express|April 4, 2015
Nonradiative recombination--critical in choosing quantum well number for InGaN/GaN light-emitting diodesYi Ping Zhang, Zi-Hui Zhang, Wei Liu, et al.Scientific Reports|November 10, 2016
High brightness formamidinium lead bromide perovskite nanocrystal light emitting devicesAjay Perumal, Sushant Shendre, Mingjie Li, et al.Pageof 3