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Szymon Grzanka

Showing results (11-20 of 17) with videos related to

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Optics Letters|October 2, 2013
Visible light communications using a directly modulated 422 nm GaN laser diodeScott Watson, Mingming Tan, Stephen P Najda, et al.
Optics Letters|August 1, 2020
InGaN blue light emitting micro-diodes with current path defined by tunnel junctionKrzysztof Gibasiewicz, Agata Bojarska-Cieślińska, Grzegorz Muzioł, et al.
Materials (Basel, Switzerland)|September 28, 2024
Pros and Cons of (NH<sub>4</sub>)<sub>2</sub>S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser DiodeIryna Levchenko, Serhii Kryvyi, Eliana Kamińska, et al.
Materials (Basel, Switzerland)|August 17, 2019
Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow StripesMarcin Sarzyński, Ewa Grzanka, Szymon Grzanka, et al.
Scientific Reports|January 29, 2021
The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWsMikolaj Grabowski, Ewa Grzanka, Szymon Grzanka, et al.
ACS Applied Materials & Interfaces|November 9, 2020
Surface Photochemical Corrosion as a Mechanism for Fast Degradation of InGaN UV Laser DiodesLucja Marona, Przemek Wisniewski, Marek Wzorek, et al.
ACS Applied Materials & Interfaces|February 2, 2021
Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum WellsJulita Smalc-Koziorowska, Ewa Grzanka, Artur Lachowski, et al.
Pageof 2

Showing results (11-20 of 17) with videos related to

Sort By:
Pageof 2
You have reached the last page of results.This site can display upto 17 results.
Optics Letters|October 2, 2013
Visible light communications using a directly modulated 422 nm GaN laser diodeScott Watson, Mingming Tan, Stephen P Najda, et al.
Optics Letters|August 1, 2020
InGaN blue light emitting micro-diodes with current path defined by tunnel junctionKrzysztof Gibasiewicz, Agata Bojarska-Cieślińska, Grzegorz Muzioł, et al.
Materials (Basel, Switzerland)|September 28, 2024
Pros and Cons of (NH<sub>4</sub>)<sub>2</sub>S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser DiodeIryna Levchenko, Serhii Kryvyi, Eliana Kamińska, et al.
Materials (Basel, Switzerland)|August 17, 2019
Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow StripesMarcin Sarzyński, Ewa Grzanka, Szymon Grzanka, et al.
Scientific Reports|January 29, 2021
The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWsMikolaj Grabowski, Ewa Grzanka, Szymon Grzanka, et al.
ACS Applied Materials & Interfaces|November 9, 2020
Surface Photochemical Corrosion as a Mechanism for Fast Degradation of InGaN UV Laser DiodesLucja Marona, Przemek Wisniewski, Marek Wzorek, et al.
ACS Applied Materials & Interfaces|February 2, 2021
Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum WellsJulita Smalc-Koziorowska, Ewa Grzanka, Artur Lachowski, et al.
Pageof 2