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Physical Review Letters
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September 17, 2013
Electronic structure of spinel-type nitride compounds Si3N4, Ge3N4, and Sn3N4 with tunable band gaps: application to light emitting diodes
T D Boyko, A Hunt, A Zerr, et al.
Journal of Synchrotron Radiation
|
June 28, 2014
Measuring partial fluorescence yield using filtered detectors
T D Boyko, R J Green, A Moewes, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|
April 27, 2012
Effect of 3d doping on the electronic structure of BaFe2As2
J A McLeod, A Buling, R J Green, et al.
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of 1
Search research articles
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Showing results (1-10 of 3) with videos related to
Sort By:
Page
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Physical Review Letters
|
September 17, 2013
Electronic structure of spinel-type nitride compounds Si3N4, Ge3N4, and Sn3N4 with tunable band gaps: application to light emitting diodes
T D Boyko, A Hunt, A Zerr, et al.
Journal of Synchrotron Radiation
|
June 28, 2014
Measuring partial fluorescence yield using filtered detectors
T D Boyko, R J Green, A Moewes, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|
April 27, 2012
Effect of 3d doping on the electronic structure of BaFe2As2
J A McLeod, A Buling, R J Green, et al.
Page
of 1