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Physical Review Letters|May 18, 2013
Optical emission of a strained direct-band-gap Ge quantum well embedded inside InGaAs alloy layersN Pavarelli, T J Ochalski, F Murphy-Armando, et al.
Nanotechnology|December 24, 2010
Lateral interdot carrier transfer in an InAs quantum dot cluster grown on a pyramidal GaAs surfaceB L Liang, P S Wong, N Pavarelli, et al.
Nano Letters|August 12, 2010
Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transitionJ He, C J Reyner, B L Liang, et al.
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