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T Vasen

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Journal of Physics. Condensed Matter : an Institute of Physics Journal|May 1, 2018
Physics and performances of III-V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom nanowire simulationsA Afzalian, T Vasen, P Ramvall, et al.
Scientific Reports|January 19, 2019
Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETsT Vasen, P Ramvall, A Afzalian, et al.
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Showing results (1-10 of 2) with videos related to

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Pageof 1
Journal of Physics. Condensed Matter : an Institute of Physics Journal|May 1, 2018
Physics and performances of III-V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom nanowire simulationsA Afzalian, T Vasen, P Ramvall, et al.
Scientific Reports|January 19, 2019
Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETsT Vasen, P Ramvall, A Afzalian, et al.
Pageof 1