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T W Noh

Showing results (21-30 of 48) with videos related to

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Physical Review Letters|August 16, 2006
Effect of orbital rotation and mixing on the optical properties of orthorhombic RMnO3 (R=La, Pr, Nd, Gd, and Tb)M W Kim, S J Moon, J H Jung, et al.
Physical Review Letters|August 27, 2011
Giant flexoelectric effect in ferroelectric epitaxial thin filmsD Lee, A Yoon, S Y Jang, et al.
Physical Review Letters|February 7, 2007
Polarization switching dynamics governed by the thermodynamic nucleation process in ultrathin ferroelectric filmsJ Y Jo, D J Kim, Y S Kim, et al.
Physical Review Letters|March 5, 2009
Occurrence of both unipolar memory and threshold resistance switching in a NiO filmS H Chang, J S Lee, S C Chae, et al.
Scientific Reports|November 3, 2019
Anomalous anisotropic behaviour of spin-triplet proximity effect in Au/SrRuO<sub>3</sub>/Sr<sub>2</sub>RuO<sub>4</sub> junctionsM S Anwar, M Kunieda, R Ishiguro, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|June 22, 2011
Clustering of impurity atoms in Co-doped anatase TiO(2) thin films probed with soft x-ray fluorescenceG S Chang, E Z Kurmaev, D W Boukhvalov, et al.
Physical Review Letters|December 31, 2005
Polarization relaxation induced by a depolarization field in ultrathin ferroelectric capacitorsD J Kim, J Y Jo, Y S Kim, et al.
Physical Review Letters|March 5, 2009
Nonlinear dynamics of domain-wall propagation in epitaxial ferroelectric thin filmsJ Y Jo, S M Yang, T H Kim, et al.
Scientific Reports|May 28, 2015
Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO3 filmsY J Shin, B C Jeon, S M Yang, et al.
Nanotechnology|July 18, 2012
Forming mechanism of the bipolar resistance switching in double-layer memristive nanodevicesS B Lee, H K Yoo, K Kim, et al.
Pageof 5

Showing results (21-30 of 48) with videos related to

Sort By:
Pageof 5
Physical Review Letters|August 16, 2006
Effect of orbital rotation and mixing on the optical properties of orthorhombic RMnO3 (R=La, Pr, Nd, Gd, and Tb)M W Kim, S J Moon, J H Jung, et al.
Physical Review Letters|August 27, 2011
Giant flexoelectric effect in ferroelectric epitaxial thin filmsD Lee, A Yoon, S Y Jang, et al.
Physical Review Letters|February 7, 2007
Polarization switching dynamics governed by the thermodynamic nucleation process in ultrathin ferroelectric filmsJ Y Jo, D J Kim, Y S Kim, et al.
Physical Review Letters|March 5, 2009
Occurrence of both unipolar memory and threshold resistance switching in a NiO filmS H Chang, J S Lee, S C Chae, et al.
Scientific Reports|November 3, 2019
Anomalous anisotropic behaviour of spin-triplet proximity effect in Au/SrRuO<sub>3</sub>/Sr<sub>2</sub>RuO<sub>4</sub> junctionsM S Anwar, M Kunieda, R Ishiguro, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|June 22, 2011
Clustering of impurity atoms in Co-doped anatase TiO(2) thin films probed with soft x-ray fluorescenceG S Chang, E Z Kurmaev, D W Boukhvalov, et al.
Physical Review Letters|December 31, 2005
Polarization relaxation induced by a depolarization field in ultrathin ferroelectric capacitorsD J Kim, J Y Jo, Y S Kim, et al.
Physical Review Letters|March 5, 2009
Nonlinear dynamics of domain-wall propagation in epitaxial ferroelectric thin filmsJ Y Jo, S M Yang, T H Kim, et al.
Scientific Reports|May 28, 2015
Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO3 filmsY J Shin, B C Jeon, S M Yang, et al.
Nanotechnology|July 18, 2012
Forming mechanism of the bipolar resistance switching in double-layer memristive nanodevicesS B Lee, H K Yoo, K Kim, et al.
Pageof 5