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Tae Sik Yoon

Showing results (21-30 of 47) with videos related to

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ACS Omega|April 13, 2026
Comparative Growth and Functional Integration of CeO<sub>2</sub> Films via Plasma-Enhanced and Thermal ALD Using a Tailored Cerium Precursor for Artificial Synaptic DevicesYewon Seo, Debananda Mohapatra, Sola Moon, et al.
Annals of Rehabilitation Medicine|September 15, 2012
Factors that Influence Quiet Standing Balance of Patients with Incomplete Cervical Spinal Cord InjuriesGa Eun Lee, Hasuk Bae, Tae Sik Yoon, et al.
ACS Applied Materials & Interfaces|September 14, 2019
Analog Memristive Characteristics of Mesoporous Silica-Titania Nanocomposite Device Concurrent with Selection Diode PropertyHunsang Jung, Yo-Han Kim, Jaekwang Kim, et al.
Nanotechnology|November 3, 2018
Single- and double-gate synaptic transistor with TaO <sub>x</sub> gate insulator and IGZO channel layerKeonwon Beom, Paul Yang, Daehoon Park, et al.
Journal of Nanoscience and Nanotechnology|May 12, 2015
Resistive switching characteristics of manganese oxide nanoparticle assembly with crossbar arraysQuanli Hu, Jae Hyuk Shim, Yawar Abbas, et al.
Journal of Nanoscience and Nanotechnology|November 30, 2011
Charging effect in Au nanoparticle memory device with biomolecule binding mechanismSung Mok Jung, Hyung-Jun Kim, Bong-Jin Kim, et al.
Nanotechnology|May 11, 2017
Synaptic transistor with a reversible and analog conductance modulation using a Pt/HfOx/n-IGZO memcapacitorPaul Yang, Hyung Jun Kim, Hong Zheng, et al.
Journal of Nanoscience and Nanotechnology|July 5, 2012
Reflectivity spectra and colors of porous anodic aluminum oxide containing silver nanoparticles by plasmonic absorptionQuanli Hu, Hyun Ho Lee, Dae-Yong Jeong, et al.
ACS Applied Materials & Interfaces|June 15, 2025
Enhanced Nonvolatile Electrochemical Random-Access Memory and Artificial Synapse Characteristics through Oxygen Ion-Exchange Engineering in an Atomic-Layer-Deposited HfO<sub>2-<i>x</i></sub> Gate Insulator and a Zinc Oxide Channel LayerJimin Han, Taeyun Noh, Boyoung Jeong, et al.
Nanomaterials (Basel, Switzerland)|February 12, 2021
Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered DeviceWonkyu Kang, Kyoungmin Woo, Hyon Bin Na, et al.
Pageof 5

Showing results (21-30 of 47) with videos related to

Sort By:
Pageof 5
ACS Omega|April 13, 2026
Comparative Growth and Functional Integration of CeO<sub>2</sub> Films via Plasma-Enhanced and Thermal ALD Using a Tailored Cerium Precursor for Artificial Synaptic DevicesYewon Seo, Debananda Mohapatra, Sola Moon, et al.
Annals of Rehabilitation Medicine|September 15, 2012
Factors that Influence Quiet Standing Balance of Patients with Incomplete Cervical Spinal Cord InjuriesGa Eun Lee, Hasuk Bae, Tae Sik Yoon, et al.
ACS Applied Materials & Interfaces|September 14, 2019
Analog Memristive Characteristics of Mesoporous Silica-Titania Nanocomposite Device Concurrent with Selection Diode PropertyHunsang Jung, Yo-Han Kim, Jaekwang Kim, et al.
Nanotechnology|November 3, 2018
Single- and double-gate synaptic transistor with TaO <sub>x</sub> gate insulator and IGZO channel layerKeonwon Beom, Paul Yang, Daehoon Park, et al.
Journal of Nanoscience and Nanotechnology|May 12, 2015
Resistive switching characteristics of manganese oxide nanoparticle assembly with crossbar arraysQuanli Hu, Jae Hyuk Shim, Yawar Abbas, et al.
Journal of Nanoscience and Nanotechnology|November 30, 2011
Charging effect in Au nanoparticle memory device with biomolecule binding mechanismSung Mok Jung, Hyung-Jun Kim, Bong-Jin Kim, et al.
Nanotechnology|May 11, 2017
Synaptic transistor with a reversible and analog conductance modulation using a Pt/HfOx/n-IGZO memcapacitorPaul Yang, Hyung Jun Kim, Hong Zheng, et al.
Journal of Nanoscience and Nanotechnology|July 5, 2012
Reflectivity spectra and colors of porous anodic aluminum oxide containing silver nanoparticles by plasmonic absorptionQuanli Hu, Hyun Ho Lee, Dae-Yong Jeong, et al.
ACS Applied Materials & Interfaces|June 15, 2025
Enhanced Nonvolatile Electrochemical Random-Access Memory and Artificial Synapse Characteristics through Oxygen Ion-Exchange Engineering in an Atomic-Layer-Deposited HfO<sub>2-<i>x</i></sub> Gate Insulator and a Zinc Oxide Channel LayerJimin Han, Taeyun Noh, Boyoung Jeong, et al.
Nanomaterials (Basel, Switzerland)|February 12, 2021
Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered DeviceWonkyu Kang, Kyoungmin Woo, Hyon Bin Na, et al.
Pageof 5