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Taeyoung Won

Showing results (11-20 of 14) with videos related to

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Journal of Nanoscience and Nanotechnology|November 30, 2011
Kinetic Monte Carlo study on the suppression of boron transient enhanced diffusion with carbon pre-implantSoon-Yeol Park, Kun-Sik Sung, Taeyoung Won
Journal of Nanoscience and Nanotechnology|December 1, 2007
Atomistic simulation of boron diffusion with charged defects and diffusivity in strained Si/SiGeYoung-Kyu Kim, Kwan-Sun Yoon, Joong-Sik Kim, et al.
Journal of Nanoscience and Nanotechnology|December 4, 2008
Ab-lnitio study of neutral indium diffusion in uniaxially- and biaxially-strained siliconYoung-Kyu Kim, Bum-Goo Cho, Soon-Yeol Park, et al.
Journal of Nanoscience and Nanotechnology|December 1, 2007
Quantum mechanical device modeling: FinFET having an isolated n+/p+ gate region strapped with poly-siliconHan-Geon Kim, Joong-Sik Kim, Young-Kyu Kim, et al.
Pageof 2

Showing results (11-20 of 14) with videos related to

Sort By:
Pageof 2
You have reached the last page of results.This site can display upto 14 results.
Journal of Nanoscience and Nanotechnology|November 30, 2011
Kinetic Monte Carlo study on the suppression of boron transient enhanced diffusion with carbon pre-implantSoon-Yeol Park, Kun-Sik Sung, Taeyoung Won
Journal of Nanoscience and Nanotechnology|December 1, 2007
Atomistic simulation of boron diffusion with charged defects and diffusivity in strained Si/SiGeYoung-Kyu Kim, Kwan-Sun Yoon, Joong-Sik Kim, et al.
Journal of Nanoscience and Nanotechnology|December 4, 2008
Ab-lnitio study of neutral indium diffusion in uniaxially- and biaxially-strained siliconYoung-Kyu Kim, Bum-Goo Cho, Soon-Yeol Park, et al.
Journal of Nanoscience and Nanotechnology|December 1, 2007
Quantum mechanical device modeling: FinFET having an isolated n+/p+ gate region strapped with poly-siliconHan-Geon Kim, Joong-Sik Kim, Young-Kyu Kim, et al.
Pageof 2