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Takhee Lee

Showing results (131-140 of 165) with videos related to

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ACS Nano|June 29, 2018
Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS<sub>2</sub> Field-Effect Transistors under High Electric FieldsJinsu Pak, Yeonsik Jang, Junghwan Byun, et al.
Nano Letters|April 24, 2012
Flexible multilevel resistive memory with controlled charge trap B- and N-doped carbon nanotubesSun Kak Hwang, Ju Min Lee, Seungjun Kim, et al.
ACS Nano|October 6, 2016
Single-Atom Switches and Single-Atom Gaps Using Stretched Metal NanowiresQingling Wang, Ran Liu, Dong Xiang, et al.
Nano Letters|October 16, 2010
Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistorJung Inn Sohn, Su Seok Choi, Stephen M Morris, et al.
Ultramicroscopy|October 27, 2009
Fabrication of ball-shaped atomic force microscope tips by ion-beam-induced deposition of platinum on multiwall carbon nanotubesYung Ho Kahng, Jinho Choi, Kwanghoon Jeong, et al.
Nanotechnology|February 24, 2016
Electrical characterization of benzenedithiolate molecular electronic devices with graphene electrodes on rigid and flexible substratesYeonsik Jang, Hyunhak Jeong, Dongku Kim, et al.
Nano Letters|June 12, 2025
Achieving Boosted Thermoelectric Power Factor of MoS<sub>2</sub> through Selective Charged-Impurity-Free DopingSooyeon Moon, Jiwoo Yang, Deok Hwang Kwon, et al.
ACS Nano|June 18, 2015
Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off RatioGwangtaek Oh, Jin-Soo Kim, Ji Hoon Jeon, et al.
Scientific Reports|November 11, 2016
Trap-mediated electronic transport properties of gate-tunable pentacene/MoS<sub>2</sub> p-n heterojunction diodesJae-Keun Kim, Kyungjune Cho, Tae-Young Kim, et al.
Small Methods|February 3, 2023
In Situ Adjustable Nanogaps and In-Plane Break JunctionsXueyan Zhao, Xubin Zhang, Kaikai Yin, et al.
Pageof 17

Showing results (131-140 of 165) with videos related to

Sort By:
Pageof 17
ACS Nano|June 29, 2018
Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS<sub>2</sub> Field-Effect Transistors under High Electric FieldsJinsu Pak, Yeonsik Jang, Junghwan Byun, et al.
Nano Letters|April 24, 2012
Flexible multilevel resistive memory with controlled charge trap B- and N-doped carbon nanotubesSun Kak Hwang, Ju Min Lee, Seungjun Kim, et al.
ACS Nano|October 6, 2016
Single-Atom Switches and Single-Atom Gaps Using Stretched Metal NanowiresQingling Wang, Ran Liu, Dong Xiang, et al.
Nano Letters|October 16, 2010
Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistorJung Inn Sohn, Su Seok Choi, Stephen M Morris, et al.
Ultramicroscopy|October 27, 2009
Fabrication of ball-shaped atomic force microscope tips by ion-beam-induced deposition of platinum on multiwall carbon nanotubesYung Ho Kahng, Jinho Choi, Kwanghoon Jeong, et al.
Nanotechnology|February 24, 2016
Electrical characterization of benzenedithiolate molecular electronic devices with graphene electrodes on rigid and flexible substratesYeonsik Jang, Hyunhak Jeong, Dongku Kim, et al.
Nano Letters|June 12, 2025
Achieving Boosted Thermoelectric Power Factor of MoS<sub>2</sub> through Selective Charged-Impurity-Free DopingSooyeon Moon, Jiwoo Yang, Deok Hwang Kwon, et al.
ACS Nano|June 18, 2015
Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off RatioGwangtaek Oh, Jin-Soo Kim, Ji Hoon Jeon, et al.
Scientific Reports|November 11, 2016
Trap-mediated electronic transport properties of gate-tunable pentacene/MoS<sub>2</sub> p-n heterojunction diodesJae-Keun Kim, Kyungjune Cho, Tae-Young Kim, et al.
Small Methods|February 3, 2023
In Situ Adjustable Nanogaps and In-Plane Break JunctionsXueyan Zhao, Xubin Zhang, Kaikai Yin, et al.
Pageof 17