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Science (New York, N.Y.)|April 18, 1997
Atomistic Processes in the Early Stages of Thin-Film GrowthZhang, LagallyPhysical Review Letters|September 16, 2000
Structure and energetics of the Si- SiO2 interfaceTu, TersoffPhysical Review Letters|September 16, 2000
Role of fermi-level pinning in nanotube schottky diodesLeonard, TersoffPhysical Review Letters|October 3, 2001
Facet growth under stress: the limits of strained-layer stabilityJ TersoffPhysical Review Letters|November 18, 2000
Negative differential resistance in nanotube devicesLeonard, TersoffScience (New York, N.Y.)|November 21, 1997
Adatom pairing structures for Ge on si(100): the initial stage of island formationQin, LagallyPhysical Review Letters|September 16, 2000
Nucleationless three-dimensional island formation in low-misfit heteroepitaxySutter, LagallyPhysical Review Letters|October 13, 2000
Diffusional kinetics of SiGe dimers on Si(100) using atom-tracking scanning tunneling microscopyQin, Swartzentruber, LagallyPageof 163,306