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Optics Express|October 6, 2012
Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surfaceBo Sun, Lixia Zhao, Tongbo Wei, et al.
Scientific Reports|June 25, 2016
Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxyTongbo Wei, Jiankun Yang, Yang Wei, et al.
Optics Express|January 26, 2011
Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islandsTongbo Wei, Qingfeng Kong, Junxi Wang, et al.
Nanotechnology|January 20, 2017
Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithographyZhuo Xiong, Tongbo Wei, Yonghui Zhang, et al.
Optics Letters|May 2, 2019
High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized β-Ga<sub>2</sub>O<sub>3</sub> layerRuilin Meng, Xiaoli Ji, Zheng Lou, et al.
Optics Letters|May 23, 2023
Strain modulated luminescence in green InGaN/GaN multiple quantum wells with microwire array by piezo-phototronic effectRenfeng Chen, Yu Yin, Lulu Wang, et al.
Micromachines|June 28, 2023
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc AlloyZhongxuan Hou, Yongkang Zhang, Chaowei Si, et al.
RSC Advances|May 11, 2022
Crystallographic orientation control and optical properties of GaN nanowiresShaoteng Wu, Liancheng Wang, Xiaoyan Yi, et al.
Optics Express|September 15, 2015
Super-aligned carbon nanotubes patterned sapphire substrate to improve quantum efficiency of InGaN/GaN light-emitting diodesLiang Shan, Tongbo Wei, Yuanping Sun, et al.
Chemical Communications (Cambridge, England)|September 3, 2025
Transfer-free growth of wafer-level graphene <i>via</i> a Mo sacrificerWenze Wei, Yiming Luo, Kaixuan Zhou, et al.
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