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Materials (Basel, Switzerland)|November 30, 2018
Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered SiFang Ren, Yue Yin, Yunyu Wang, et al.
Optics Express|February 4, 2017
Aluminum nitride-on-sapphire platform for integrated high-Q microresonatorsXianwen Liu, Changzheng Sun, Bing Xiong, et al.
Optics Express|October 17, 2014
Enhanced performance of InGaN-based light emitting diodes through a special etch and regrown process in n-GaN layerBinglei Fu, Junjie Kang, Tongbo Wei, et al.
Materials (Basel, Switzerland)|December 7, 2018
Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂Yue Yin, Fang Ren, Yunyu Wang, et al.
ACS Applied Materials & Interfaces|December 31, 2025
Interfacial-Modulated Lattice-Polarity-Controlled Quasi-van der Waals Epitaxy of AIN FilmYiwei Duo, Lulu Wang, Zhetong Liu, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|August 11, 2020
Quasi-2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light-Emitting DiodesHongliang Chang, Zhaolong Chen, Bingyao Liu, et al.
Nanotechnology|November 29, 2018
Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescenceShaoteng Wu, Liancheng Wang, Zhiqiang Liu, et al.
Light, Science & Applications|April 8, 2022
Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diodeHongliang Chang, Zhetong Liu, Shenyuan Yang, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|September 23, 2025
Wafer-Scale Manufacturing and Crack-Free Transferring of GaN-Based Membranes for Flexible OptoelectronicsYaqi Gao, Kaixuan Zhou, Zhetong Liu, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|March 23, 2024
Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO<sub>2</sub>/Si(100) for Monolithic Optoelectronic IntegrationDongdong Liang, Bei Jiang, Zhetong Liu, et al.
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