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Trampert

Showing results (71-80 of 133) with videos related to

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Scientific Reports|May 7, 2016
Feature Adaptive Sampling for Scanning Electron MicroscopyTim Dahmen, Michael Engstler, Christoph Pauly, et al.
Nanotechnology|April 6, 2013
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emissionS Albert, A Bengoechea-Encabo, M A Sánchez-García, et al.
Nano Letters|November 8, 2012
Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polaritySergio Fernández-Garrido, Xiang Kong, Tobias Gotschke, et al.
Nanotechnology|November 6, 2012
Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowiresX Kong, S Albert, A Bengoechea-Encabo, et al.
Nanotechnology|February 7, 2015
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodesM Musolino, A Tahraoui, S Fernández-Garrido, et al.
Nano Letters|August 1, 2013
Control over the number density and diameter of GaAs nanowires on Si(111) mediated by droplet epitaxyClaudio Somaschini, Sergio Bietti, Achim Trampert, et al.
The Journal of Chemical Physics|June 10, 2016
Growth and stability of rocksalt Zn1-xMgxO epilayers and ZnO/MgO superlattice on MgO (100) substrate by molecular beam epitaxyC-Y James Lu, Y-T Tu, T Yan, et al.
Scientific Reports|January 19, 2020
On interevent time distributions of avalanche dynamicsPinaki Kumar, Evangelos Korkolis, Roberto Benzi, et al.
Physical Review Letters|May 21, 2005
Columnar AlGaN/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111)Jelena Ristić, Enrique Calleja, Achim Trampert, et al.
Nano Letters|November 27, 2013
GaAs-Fe₃Si core-shell nanowires: nanobar magnetsMaria Hilse, Jens Herfort, Bernd Jenichen, et al.
Pageof 14

Showing results (71-80 of 133) with videos related to

Sort By:
Pageof 14
Scientific Reports|May 7, 2016
Feature Adaptive Sampling for Scanning Electron MicroscopyTim Dahmen, Michael Engstler, Christoph Pauly, et al.
Nanotechnology|April 6, 2013
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emissionS Albert, A Bengoechea-Encabo, M A Sánchez-García, et al.
Nano Letters|November 8, 2012
Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polaritySergio Fernández-Garrido, Xiang Kong, Tobias Gotschke, et al.
Nanotechnology|November 6, 2012
Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowiresX Kong, S Albert, A Bengoechea-Encabo, et al.
Nanotechnology|February 7, 2015
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodesM Musolino, A Tahraoui, S Fernández-Garrido, et al.
Nano Letters|August 1, 2013
Control over the number density and diameter of GaAs nanowires on Si(111) mediated by droplet epitaxyClaudio Somaschini, Sergio Bietti, Achim Trampert, et al.
The Journal of Chemical Physics|June 10, 2016
Growth and stability of rocksalt Zn1-xMgxO epilayers and ZnO/MgO superlattice on MgO (100) substrate by molecular beam epitaxyC-Y James Lu, Y-T Tu, T Yan, et al.
Scientific Reports|January 19, 2020
On interevent time distributions of avalanche dynamicsPinaki Kumar, Evangelos Korkolis, Roberto Benzi, et al.
Physical Review Letters|May 21, 2005
Columnar AlGaN/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111)Jelena Ristić, Enrique Calleja, Achim Trampert, et al.
Nano Letters|November 27, 2013
GaAs-Fe₃Si core-shell nanowires: nanobar magnetsMaria Hilse, Jens Herfort, Bernd Jenichen, et al.
Pageof 14