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Scientific Reports
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May 7, 2016
Feature Adaptive Sampling for Scanning Electron Microscopy
Tim Dahmen, Michael Engstler, Christoph Pauly, et al.
Nanotechnology
|
April 6, 2013
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission
S Albert, A Bengoechea-Encabo, M A Sánchez-García, et al.
Nano Letters
|
November 8, 2012
Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity
Sergio Fernández-Garrido, Xiang Kong, Tobias Gotschke, et al.
Nanotechnology
|
November 6, 2012
Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires
X Kong, S Albert, A Bengoechea-Encabo, et al.
Nanotechnology
|
February 7, 2015
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes
M Musolino, A Tahraoui, S Fernández-Garrido, et al.
Nano Letters
|
August 1, 2013
Control over the number density and diameter of GaAs nanowires on Si(111) mediated by droplet epitaxy
Claudio Somaschini, Sergio Bietti, Achim Trampert, et al.
The Journal of Chemical Physics
|
June 10, 2016
Growth and stability of rocksalt Zn1-xMgxO epilayers and ZnO/MgO superlattice on MgO (100) substrate by molecular beam epitaxy
C-Y James Lu, Y-T Tu, T Yan, et al.
Scientific Reports
|
January 19, 2020
On interevent time distributions of avalanche dynamics
Pinaki Kumar, Evangelos Korkolis, Roberto Benzi, et al.
Physical Review Letters
|
May 21, 2005
Columnar AlGaN/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111)
Jelena Ristić, Enrique Calleja, Achim Trampert, et al.
Nano Letters
|
November 27, 2013
GaAs-Fe₃Si core-shell nanowires: nanobar magnets
Maria Hilse, Jens Herfort, Bernd Jenichen, et al.
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Search research articles
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Showing results (71-80 of 133) with videos related to
Sort By:
Page
of 14
Scientific Reports
|
May 7, 2016
Feature Adaptive Sampling for Scanning Electron Microscopy
Tim Dahmen, Michael Engstler, Christoph Pauly, et al.
Nanotechnology
|
April 6, 2013
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission
S Albert, A Bengoechea-Encabo, M A Sánchez-García, et al.
Nano Letters
|
November 8, 2012
Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity
Sergio Fernández-Garrido, Xiang Kong, Tobias Gotschke, et al.
Nanotechnology
|
November 6, 2012
Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires
X Kong, S Albert, A Bengoechea-Encabo, et al.
Nanotechnology
|
February 7, 2015
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes
M Musolino, A Tahraoui, S Fernández-Garrido, et al.
Nano Letters
|
August 1, 2013
Control over the number density and diameter of GaAs nanowires on Si(111) mediated by droplet epitaxy
Claudio Somaschini, Sergio Bietti, Achim Trampert, et al.
The Journal of Chemical Physics
|
June 10, 2016
Growth and stability of rocksalt Zn1-xMgxO epilayers and ZnO/MgO superlattice on MgO (100) substrate by molecular beam epitaxy
C-Y James Lu, Y-T Tu, T Yan, et al.
Scientific Reports
|
January 19, 2020
On interevent time distributions of avalanche dynamics
Pinaki Kumar, Evangelos Korkolis, Roberto Benzi, et al.
Physical Review Letters
|
May 21, 2005
Columnar AlGaN/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111)
Jelena Ristić, Enrique Calleja, Achim Trampert, et al.
Nano Letters
|
November 27, 2013
GaAs-Fe₃Si core-shell nanowires: nanobar magnets
Maria Hilse, Jens Herfort, Bernd Jenichen, et al.
Page
of 14