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Triratna Muneshwar

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Nature Communications|February 5, 2016
Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel currentGem Shoute, Amir Afshar, Triratna Muneshwar, et al.
ACS Applied Materials & Interfaces|November 13, 2018
Zr<sub>2</sub>N<sub>2</sub>O Coating-Improved Corrosion Resistance for the Anodic Dissolution Induced by Cathodic Transient PotentialXian-Zong Wang, Hong Luo, Triratna Muneshwar, et al.
Science Advances|May 9, 2025
A plasmon-electron addressable and CMOS compatible random access memoryShawn R Greig, Curtis J Firby, Triratna Muneshwar, et al.
Pageof 1

Showing results (1-10 of 3) with videos related to

Sort By:
Pageof 1
Nature Communications|February 5, 2016
Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel currentGem Shoute, Amir Afshar, Triratna Muneshwar, et al.
ACS Applied Materials & Interfaces|November 13, 2018
Zr<sub>2</sub>N<sub>2</sub>O Coating-Improved Corrosion Resistance for the Anodic Dissolution Induced by Cathodic Transient PotentialXian-Zong Wang, Hong Luo, Triratna Muneshwar, et al.
Science Advances|May 9, 2025
A plasmon-electron addressable and CMOS compatible random access memoryShawn R Greig, Curtis J Firby, Triratna Muneshwar, et al.
Pageof 1