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RSC Advances|May 25, 2026
Exploring vibrational properties, Rashba spin splitting, and phonon-limited carrier mobility in Janus WBPX2 (X = S, Se, Te) monolayersTuan V Vu, Le T Hoa, Huynh V Phuc, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|October 20, 2021
Structural, electronic, and transport properties of Janus GaInX2(X=S, Se, Te) monolayers: first-principles studyTuan V Vu, Tran P T Linh, Huynh V Phuc, et al.
RSC Advances|October 24, 2022
A new family of NaTMGe (TM = 3d transition metals) half-Heusler compounds: the role of TM modificationTuan V Vu, Duy Khanh Nguyen, J Guerrero-Sanchez, et al.
Physical Chemistry Chemical Physics : PCCP|July 5, 2022
Rashba-type spin splitting and transport properties of novel Janus XWGeN2 (X = O, S, Se, Te) monolayersTuan V Vu, Huynh V Phuc, Chuong V Nguyen, et al.
RSC Advances|May 6, 2022
Electronic properties and low lattice thermal conductivity (κ l) of mono-layer (ML) MoS2: FP-LAPW incorporated with spin-orbit coupling (SOC)D P Rai, Tuan V Vu, Amel Laref, et al.
Nanoscale Advances|August 8, 2024
Large piezoelectric responses and ultra-high carrier mobility in Janus HfGeZ3H (Z = N, P, As) monolayers: a first-principles studyTuan V Vu, Huynh V Phuc, Le T T Phuong, et al.
Langmuir : the ACS Journal of Surfaces and Colloids|September 23, 2024
Unveiling Versatile Electronic Properties and Contact Features of Metal-Semiconductor Graphene/γ-Ge2SSe van der Waals HeterostructuresTuan V Vu, Andrey I Kartamyshev, Thi H Ho, et al.
Scientific Reports|October 19, 2021
Electronic and optical properties of bulk and surface of CsPbBr3 inorganic halide perovskite a first principles DFT 1/2 approachMohammed Ezzeldien, Samah Al-Qaisi, Z A Alrowaili, et al.
RSC Advances|January 23, 2023
Electronic and optical properties of thiogermanate AgGaGeS4: theory and experimentTuan V Vu, Vo D Dat, A A Lavrentyev, et al.
RSC Advances|July 12, 2024
A first-principles prediction of novel Janus ZrGeZ3H (Z = N, P, and As) monolayers: Raman active modes, piezoelectric responses, electronic properties, and carrier mobilityTuan V Vu, Vo T T Vi, Nguyen T Hiep, et al.
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