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Advanced Materials (Deerfield Beach, Fla.)|November 23, 2022
Metavalent Bonding Origins of Unusual Properties of Group IV ChalcogenidesRaagya Arora, Umesh V Waghmare, C N R Rao
Angewandte Chemie (International Ed. in English)|January 24, 2020
Intrinsically Low Thermal Conductivity and High Carrier Mobility in Dual Topological Quantum Material, n-Type BiTeManisha Samanta, Koushik Pal, Umesh V Waghmare, et al.
Angewandte Chemie (International Ed. in English)|February 27, 2016
The Origin of Ultralow Thermal Conductivity in InTe: Lone-Pair-Induced Anharmonic RattlingManoj K Jana, Koushik Pal, Umesh V Waghmare, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 22, 2018
Origin of the monolayer Raman signature in hexagonal boron nitride: a first-principles analysisJorge Ontaneda, Anjali Singh, Umesh V Waghmare, et al.
Journal of the American Chemical Society|February 12, 2015
Ambient stable tetragonal and orthorhombic phases in penta-twinned bipyramidal au microcrystalsGangaiah Mettela, Meha Bhogra, Umesh V Waghmare, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 10, 2011
First-principles analysis of electron correlation, spin ordering and phonons in the normal state of FeSe 1-xAnil Kumar, Pradeep Kumar, Umesh V Waghmare, et al.
The Journal of Chemical Physics|February 6, 2008
Size dependence of structural, electronic, elastic, and optical properties of selenium nanowires: a first-principles studyMousumi Upadhyay Kahaly, Prasenjit Ghosh, Shobhana Narasimhan, et al.
Physical Chemistry Chemical Physics : PCCP|January 18, 2020
Role of van der Waals interaction in enhancing the photon absorption capability of the MoS2/2D heterostructureHimanshu Saini, M V Jyothirmai, Umesh V Waghmare, et al.
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