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Unnat S Bhansali

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Advanced Materials (Deerfield Beach, Fla.)|March 23, 2012
High-performance non-volatile organic ferroelectric memory on banknotesM A Khan, Unnat S Bhansali, H N Alshareef
ACS Nano|November 12, 2013
Metal-free, single-polymer device exhibits resistive memory effectUnnat S Bhansali, Mohd A Khan, Dongkyu Cha, et al.
ACS Applied Materials & Interfaces|February 12, 2013
Solvent vapor annealing in the molecular regime drastically improves carrier transport in small-molecule thin-film transistorsHadayat Ullah Khan, Ruipeng Li, Yi Ren, et al.
Pageof 1

Showing results (1-10 of 3) with videos related to

Sort By:
Pageof 1
Advanced Materials (Deerfield Beach, Fla.)|March 23, 2012
High-performance non-volatile organic ferroelectric memory on banknotesM A Khan, Unnat S Bhansali, H N Alshareef
ACS Nano|November 12, 2013
Metal-free, single-polymer device exhibits resistive memory effectUnnat S Bhansali, Mohd A Khan, Dongkyu Cha, et al.
ACS Applied Materials & Interfaces|February 12, 2013
Solvent vapor annealing in the molecular regime drastically improves carrier transport in small-molecule thin-film transistorsHadayat Ullah Khan, Ruipeng Li, Yi Ren, et al.
Pageof 1