Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Urmita Sikder

Showing results (1-10 of 1) with videos related to

Pageof 1
Sort By:
Science (New York, N.Y.)|July 10, 2025
Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistorsAsir Intisar Khan, Jeong-Kyu Kim, Urmita Sikder, et al.
Pageof 1

Showing results (1-10 of 1) with videos related to

Sort By:
Pageof 1
Science (New York, N.Y.)|July 10, 2025
Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistorsAsir Intisar Khan, Jeong-Kyu Kim, Urmita Sikder, et al.
Pageof 1