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V A Soltamov

Showing results (1-10 of 5) with videos related to

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Scientific Reports|April 11, 2013
Silicon carbide light-emitting diode as a prospective room temperature source for single photonsF Fuchs, V A Soltamov, S Väth, et al.
Scientific Reports|September 15, 2016
Optical thermometry based on level anticrossing in silicon carbideA N Anisimov, D Simin, V A Soltamov, et al.
Scientific Reports|July 5, 2014
Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbideH Kraus, V A Soltamov, F Fuchs, et al.
Nature Communications|April 13, 2019
Excitation and coherent control of spin qudit modes in silicon carbide at room temperatureV A Soltamov, C Kasper, A V Poshakinskiy, et al.
Physical Review Letters|December 27, 2015
Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their StructureV A Soltamov, B V Yavkin, D O Tolmachev, et al.
Pageof 1

Showing results (1-10 of 5) with videos related to

Sort By:
Pageof 1
Scientific Reports|April 11, 2013
Silicon carbide light-emitting diode as a prospective room temperature source for single photonsF Fuchs, V A Soltamov, S Väth, et al.
Scientific Reports|September 15, 2016
Optical thermometry based on level anticrossing in silicon carbideA N Anisimov, D Simin, V A Soltamov, et al.
Scientific Reports|July 5, 2014
Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbideH Kraus, V A Soltamov, F Fuchs, et al.
Nature Communications|April 13, 2019
Excitation and coherent control of spin qudit modes in silicon carbide at room temperatureV A Soltamov, C Kasper, A V Poshakinskiy, et al.
Physical Review Letters|December 27, 2015
Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their StructureV A Soltamov, B V Yavkin, D O Tolmachev, et al.
Pageof 1