Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

V G Dorogan

Showing results (1-10 of 11) with videos related to

Pageof 2
Sort By:
Nanotechnology|January 30, 2013
Strong passivation effects on the properties of an InAs surface quantum dot hybrid structureA Lin, B L Liang, V G Dorogan, et al.
Journal of Nanoscience and Nanotechnology|May 21, 2009
InAs quantum dot clusters grown on GaAs droplet templates: surface morphologies and optical propertiesB L Liang, V G Dorogan, Yu I Mazur, et al.
Nanotechnology|August 20, 2011
Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructureYu I Mazur, V G Dorogan, M Schmidbauer, et al.
Nanoscale|November 20, 2015
Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructuresJ A Steele, J Horvat, R A Lewis, et al.
Optics Express|June 13, 2014
Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentrationJ A Steele, R A Lewis, M Henini, et al.
Nanotechnology|May 7, 2009
Spectroscopy of shallow InAs/InP quantum wire nanostructuresYu I Mazur, V G Dorogan, O Bierwagen, et al.
Nanotechnology|November 28, 2009
Engineering of 3D self-directed quantum dot ordering in multilayer InGaAs/GaAs nanostructures by means of flux gas compositionP M Lytvyn, Yu I Mazur, E Marega, et al.
Nano Letters|August 12, 2010
Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transitionJ He, C J Reyner, B L Liang, et al.
Nanotechnology|December 19, 2013
Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructuresYu I Mazur, V G Dorogan, L D de Souza, et al.
Nanotechnology|August 12, 2011
Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structureP S Wong, B L Liang, V G Dorogan, et al.
Pageof 2

Showing results (1-10 of 11) with videos related to

Sort By:
Pageof 2
Nanotechnology|January 30, 2013
Strong passivation effects on the properties of an InAs surface quantum dot hybrid structureA Lin, B L Liang, V G Dorogan, et al.
Journal of Nanoscience and Nanotechnology|May 21, 2009
InAs quantum dot clusters grown on GaAs droplet templates: surface morphologies and optical propertiesB L Liang, V G Dorogan, Yu I Mazur, et al.
Nanotechnology|August 20, 2011
Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructureYu I Mazur, V G Dorogan, M Schmidbauer, et al.
Nanoscale|November 20, 2015
Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructuresJ A Steele, J Horvat, R A Lewis, et al.
Optics Express|June 13, 2014
Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentrationJ A Steele, R A Lewis, M Henini, et al.
Nanotechnology|May 7, 2009
Spectroscopy of shallow InAs/InP quantum wire nanostructuresYu I Mazur, V G Dorogan, O Bierwagen, et al.
Nanotechnology|November 28, 2009
Engineering of 3D self-directed quantum dot ordering in multilayer InGaAs/GaAs nanostructures by means of flux gas compositionP M Lytvyn, Yu I Mazur, E Marega, et al.
Nano Letters|August 12, 2010
Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transitionJ He, C J Reyner, B L Liang, et al.
Nanotechnology|December 19, 2013
Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructuresYu I Mazur, V G Dorogan, L D de Souza, et al.
Nanotechnology|August 12, 2011
Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structureP S Wong, B L Liang, V G Dorogan, et al.
Pageof 2