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Nanomaterials (Basel, Switzerland)|February 13, 2025
Remarkably High Dielectric Constant and Capacitance Density by Ni/ZrO2/TiN Using Nanosecond Laser and Surface Plasma EffectWei Ting Fan, Pheiroijam Pooja, Albert ChinChemosphere|November 26, 2023
Remarkably fast and reusable photocatalysis by UV annealed Cu2O-SnO2 p-n heterojunctionPheiroijam Pooja, Albert ChinNanomaterials (Basel, Switzerland)|June 27, 2023
Superior High Transistor's Effective Mobility of 325 cm2/V-s by 5 nm Quasi-Two-Dimensional SnON nFETPheiroijam Pooja, Chun Che Chien, Albert ChinNanomaterials (Basel, Switzerland)|May 13, 2025
SnO Nanosheet Transistor with Remarkably High Hole Effective Mobility and More than Six Orders of Magnitude On-Current/Off-CurrentKuan-Chieh Chen, Jiancheng Wu, Pheiroijam Pooja, et al.Scientific Reports|November 1, 2024
Impact of UV annealing on the hole effective mobility in SnO pFETShi-Hao Zeng, Pheiroijam Pooja, Jiancheng Wu, et al.Scientific Reports|June 12, 2020
Annealing Effect of Glancing Angle Electron Beam Deposited TiO2/In2O3 Nanowires Array on Surface WettabilityPheiroijam Pooja, Chinnamuthu PMembranes|June 23, 2022
The Recent Development in Chemoresistive-Based Heterostructure Gas Sensor Technology, Their Future Opportunities and Challenges: A ReviewMir Waqas Alam, Pheiroijam Pooja, Muhammad Aamir, et al.Scientific Reports|April 27, 2017
Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation MaterialCheng Wei Shih, Albert ChinACS Applied Materials & Interfaces|July 26, 2016
New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap SemiconductorsCheng Wei Shih, Albert ChinNanomaterials (Basel, Switzerland)|January 6, 2021
Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel LayerTe Jui Yen, Albert Chin, Vladimir GritsenkoPageof 4