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Optics Express|October 6, 2012
Sputtered ZnO-SiO2 nanocomposite light-emitting diodes with flat-top nanosecond laser treatmentJiun-Ting Chen, Wei-Chih Lai, Chi-Heng Chen, et al.
Optics Express|January 18, 2013
Vertical InGaN light-emitting diode with a retained patterned sapphire layerY C Yang, Jinn-Kong Sheu, Ming-Lun Lee, et al.
Optics Express|November 24, 2011
Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetectionFeng-Wen Huang, Jinn-Kong Sheu, Ming-Lun Lee, et al.
Optics Express|October 19, 2017
Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctionsYen-Kuang Kuo, Ya-Hsuan Shih, Jih-Yuan Chang, et al.
ACS Applied Materials & Interfaces|November 15, 2017
Robust and Recyclable Substrate Template with an Ultrathin Nanoporous Counter Electrode for Organic-Hole-Conductor-Free Monolithic Perovskite Solar CellsMing-Hsien Li, Yu-Syuan Yang, Kuo-Chin Wang, et al.
ACS Omega|August 25, 2025
P‑Type Spin-Coated Sol-Gel Cr<sub>2</sub>O<sub>3</sub> Layer by Postannealing in VacuumWei-Chih Lai, Chan-Hung Hsu, Bo-Ting Wu, et al.
Optics Express|March 3, 2012
Vertical InGaN light-emitting diodes with a sapphire-face-up structureY C Yang, Jinn-Kong Sheu, Ming-Lun Lee, et al.
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