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Micromachines|October 26, 2024
Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier LayerQian Yu, Chunzhou Shi, Ling Yang, et al.
Micromachines|January 25, 2025
The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF ApplicationsQian Yu, Sheng Wu, Meng Zhang, et al.
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