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Physical Review Letters|October 4, 2000
Microscopic origin of the phenomenological equilibrium "Doping limit Rule" in n-type III-V semiconductorsZhang, Wei, ZungerPhysical Review Letters|October 6, 2000
Indium-indium pair correlation and surface segregation in InGaAs alloysCho, Zhang, ZungerMethods in Molecular Biology (Clifton, N.J.)|May 19, 2015
Quantification of root gravitropic response using a constant stimulus feedback systemChris WolvertonJournal of Human Evolution|March 1, 2006
Natural-trap ursid mortality and the Kurtén ResponseSteve WolvertonPhysical Review Letters|March 10, 2012
Identification of potential photovoltaic absorbers based on first-principles spectroscopic screening of materialsLiping Yu, Alex ZungerPhysical Review Letters|February 1, 2008
Intrinsic DX centers in ternary chalcopyrite semiconductorsStephan Lany, Alex ZungerPhysical Review Letters|November 5, 2004
Metal-dimer atomic reconstruction leading to deep donor states of the anion vacancy in II-VI and chalcopyrite semiconductorsStephan Lany, Alex ZungerPhysical Review Letters|March 16, 2007
Dopability, intrinsic conductivity, and nonstoichiometry of transparent conducting oxidesStephan Lany, Alex ZungerJournal of Physics. Condensed Matter : an Institute of Physics Journal|November 4, 2011
Finding the atomic configuration with a required physical property in multi-atom structuresMayeul d'Avezac, Alex ZungerNano Letters|January 7, 2015
Evolution of electronic structure as a function of layer thickness in group-VIB transition metal dichalcogenides: emergence of localization prototypesLijun Zhang, Alex ZungerPageof 44