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Nature Communications|January 5, 2020
Ultrasensitive negative capacitance phototransistorsLuqi Tu, Rongrong Cao, Xudong Wang, et al.
Nano Letters|February 10, 2026
Ultralow P-Type Contact Resistance Enabled by Evaporated SnS ContactsYing Zhang, Huiting Wang, Chang Liu, et al.
Nanoscale|January 9, 2018
A ferroelectric relaxor polymer-enhanced p-type WSe<sub>2</sub> transistorChong Yin, Xudong Wang, Yan Chen, et al.
ACS Applied Materials & Interfaces|May 31, 2019
Ultrasensitive Hybrid MoS<sub>2</sub>-ZnCdSe Quantum Dot Photodetectors with High GainShukui Zhang, Xudong Wang, Yan Chen, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 28, 2020
MoTe<sub>2</sub> p-n Homojunctions Defined by Ferroelectric PolarizationGuangjian Wu, Xudong Wang, Yan Chen, et al.
Nanotechnology|September 28, 2016
Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effectHai Huang, Jianlu Wang, Weida Hu, et al.
ACS Nano|May 15, 2023
Robust Threshold-Switching Behavior Assisted by Cu Migration in a Ferroionic CuInP<sub>2</sub>S<sub>6</sub> HeterostructureZhipeng Zhong, Shuaiqin Wu, Xiang Li, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|January 16, 2024
Long-Range Hot-Carrier Transport in Topologically Connected HgTe Quantum DotsXinning Huang, Yilu Qin, Tianle Guo, et al.
Light, Science & Applications|September 23, 2020
A versatile photodetector assisted by photovoltaic and bolometric effectsWei Jiang, Tan Zheng, Binmin Wu, et al.
Science Advances|May 11, 2022
HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetectorHanxue Jiao, Xudong Wang, Yan Chen, et al.
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