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Xixiang Jing

Showing results (1-10 of 4) with videos related to

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Physical Chemistry Chemical Physics : PCCP|June 3, 2024
Charge density fluctuation determined the interlayer friction in bilayer MN<sub>4</sub> (M = Be, Mg, and Pt)Defeng Hou, Ziyu Niu, Xuhong Li, et al.
Proceedings of the National Academy of Sciences of the United States of America|February 12, 2025
Mapping of the full polarization switching pathways for HfO<sub>2</sub> and its implicationsQi Hu, Shuning Lv, Hsiaoyi Tsai, et al.
Physical Review Letters|August 2, 2024
Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge TransferShu Shi, Tengfei Cao, Haolong Xi, et al.
Advanced Materials (Deerfield Beach, Fla.)|July 3, 2026
Fatigue-Resistant Ferroelectric Hafnium Oxides by Modulating Grain BoundariesJiufu Li, Zehao Lin, Xixiang Jing, et al.
Pageof 1

Showing results (1-10 of 4) with videos related to

Sort By:
Pageof 1
Physical Chemistry Chemical Physics : PCCP|June 3, 2024
Charge density fluctuation determined the interlayer friction in bilayer MN<sub>4</sub> (M = Be, Mg, and Pt)Defeng Hou, Ziyu Niu, Xuhong Li, et al.
Proceedings of the National Academy of Sciences of the United States of America|February 12, 2025
Mapping of the full polarization switching pathways for HfO<sub>2</sub> and its implicationsQi Hu, Shuning Lv, Hsiaoyi Tsai, et al.
Physical Review Letters|August 2, 2024
Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge TransferShu Shi, Tengfei Cao, Haolong Xi, et al.
Advanced Materials (Deerfield Beach, Fla.)|July 3, 2026
Fatigue-Resistant Ferroelectric Hafnium Oxides by Modulating Grain BoundariesJiufu Li, Zehao Lin, Xixiang Jing, et al.
Pageof 1