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Yao-Feng Chang

Showing results (11-20 of 19) with videos related to

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Physical Chemistry Chemical Physics : PCCP|July 14, 2017
Ultralow power switching in a silicon-rich SiN<sub>y</sub>/SiN<sub>x</sub> double-layer resistive memory deviceSungjun Kim, Yao-Feng Chang, Min-Hwi Kim, et al.
Small (Weinheim an Der Bergstrasse, Germany)|April 18, 2018
Scaling Effect on Silicon Nitride Memristor with Highly Doped Si SubstrateSungjun Kim, Sunghun Jung, Min-Hwi Kim, et al.
ACS Nano|May 20, 2024
Programmable Retention Characteristics in MoS<sub>2</sub>-Based Atomristors for Neuromorphic and Reservoir Computing SystemsYoonseok Lee, Yifu Huang, Yao-Feng Chang, et al.
Nanoscale|August 10, 2018
Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applicationsYing-Chen Chen, Szu-Tung Hu, Chih-Yang Lin, et al.
Advanced Materials (Deerfield Beach, Fla.)|September 24, 2015
"Cut-and-Paste" Manufacture of Multiparametric Epidermal Sensor SystemsShixuan Yang, Ying-Chen Chen, Luke Nicolini, et al.
Nanoscale|December 12, 2018
Neuronal dynamics in HfO<sub>x</sub>/AlO<sub>y</sub>-based homeothermic synaptic memristors with low-power and homogeneous resistive switchingSungjun Kim, Jia Chen, Ying-Chen Chen, et al.
Nano Letters|December 28, 2013
Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithographyLi Ji, Yao-Feng Chang, Burt Fowler, et al.
Nanoscale Research Letters|April 16, 2015
Physical and chemical mechanisms in oxide-based resistance random access memoryKuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, et al.
Nanoscale|June 22, 2017
Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO<sub>2</sub>-based RRAM device with a vanadium electrodeChih-Yang Lin, Po-Hsun Chen, Ting-Chang Chang, et al.
Pageof 2

Showing results (11-20 of 19) with videos related to

Sort By:
Pageof 2
You have reached the last page of results.This site can display upto 19 results.
Physical Chemistry Chemical Physics : PCCP|July 14, 2017
Ultralow power switching in a silicon-rich SiN<sub>y</sub>/SiN<sub>x</sub> double-layer resistive memory deviceSungjun Kim, Yao-Feng Chang, Min-Hwi Kim, et al.
Small (Weinheim an Der Bergstrasse, Germany)|April 18, 2018
Scaling Effect on Silicon Nitride Memristor with Highly Doped Si SubstrateSungjun Kim, Sunghun Jung, Min-Hwi Kim, et al.
ACS Nano|May 20, 2024
Programmable Retention Characteristics in MoS<sub>2</sub>-Based Atomristors for Neuromorphic and Reservoir Computing SystemsYoonseok Lee, Yifu Huang, Yao-Feng Chang, et al.
Nanoscale|August 10, 2018
Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applicationsYing-Chen Chen, Szu-Tung Hu, Chih-Yang Lin, et al.
Advanced Materials (Deerfield Beach, Fla.)|September 24, 2015
"Cut-and-Paste" Manufacture of Multiparametric Epidermal Sensor SystemsShixuan Yang, Ying-Chen Chen, Luke Nicolini, et al.
Nanoscale|December 12, 2018
Neuronal dynamics in HfO<sub>x</sub>/AlO<sub>y</sub>-based homeothermic synaptic memristors with low-power and homogeneous resistive switchingSungjun Kim, Jia Chen, Ying-Chen Chen, et al.
Nano Letters|December 28, 2013
Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithographyLi Ji, Yao-Feng Chang, Burt Fowler, et al.
Nanoscale Research Letters|April 16, 2015
Physical and chemical mechanisms in oxide-based resistance random access memoryKuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, et al.
Nanoscale|June 22, 2017
Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO<sub>2</sub>-based RRAM device with a vanadium electrodeChih-Yang Lin, Po-Hsun Chen, Ting-Chang Chang, et al.
Pageof 2