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Nanotechnology|November 8, 2023
Grain-size adjustment in Hf0.5Zr0.5O2ferroelectric film to improve the switching time in Hf0.5Zr0.5O2-based ferroelectric capacitorJiyeong Yoon, Yejoo Choi, Changhwan ShinMicromachines|May 28, 2020
Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass SubstrateYejoo Choi, Jaemin Shin, Seungjun Moon, et al.Scientific Reports|October 6, 2022
Improved remnant polarization of Zr-doped HfO2 ferroelectric film by CF4/O2 plasma passivationYejoo Choi, Hyeonjung Park, Changwoo Han, et al.Nanotechnology|February 1, 2023
Experimental study of endurance characteristics of Al-doped HfO2ferroelectric capacitorYejoo Choi, Jaemin Shin, Seungjun Moon, et al.Scientific Reports|November 21, 2024
Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applicationsYejoo Choi, Jaemin Shin, Jinhong Min, et al.Nano Convergence|October 31, 2025
First Demonstration of Hysteresis-Free IGZO/SnO-Based Complementary Circuits and SRAM with Long-Term Reliability Using SU-8 PassivationChangwoo Han, Hyeonjung Park, Yejoo Choi, et al.ACS Applied Materials & Interfaces|March 31, 2026
All-Oxide ITO/HZO/WOx Ferroelectric Tunnel Junctions with Oxygen-Engineered Interfaces for Highly Endurable Neuromorphic ComputingSeungjoon Jeong, Huiseong Shin, Myeongjae Choi, et al.Sensors (Basel, Switzerland)|June 10, 2022
Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO2 Ferroelectric CapacitorYejoo Choi, Changwoo Han, Jaemin Shin, et al.Life Science Alliance|April 12, 2019
CXXC5 mediates growth plate senescence and is a target for enhancement of longitudinal bone growthSehee Choi, Hyun-Yi Kim, Pu-Hyeon Cha, et al.Stem Cell Research & Therapy|July 19, 2023
Identification of potential biomarkers related to mesenchymal stem cell response in patients with Alzheimer's diseaseYejoo Choi, Sungho Shin, Hyo Jin Son, et al.Pageof 2