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Yichun Zhou

Showing results (21-30 of 41) with videos related to

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Scientific Reports|October 22, 2013
Size, separation, structural order, and mass density of molecules packing in water and iceYongli Huang, Xi Zhang, Zengsheng Ma, et al.
Physical Chemistry Chemical Physics : PCCP|September 26, 2014
Hydrogen-bond memory and water-skin supersolidity resolving the Mpemba paradoxXi Zhang, Yongli Huang, Zengsheng Ma, et al.
Chemistry (Weinheim an Der Bergstrasse, Germany)|June 22, 2013
Facile synthesis of transition-metal oxide nanocrystals embedded in hollow carbon microspheres for high-rate lithium-ion-battery anodesJun Liu, Wei Liu, Kunfeng Chen, et al.
Chemistry (Weinheim an Der Bergstrasse, Germany)|December 17, 2013
Enhancing the electrochemical performance of the LiMn(2)O(4) hollow microsphere cathode with a LiNi(0.5)Mn(1.5)O(4) coated layerWei Liu, Jun Liu, Kunfeng Chen, et al.
The Journal of Physical Chemistry Letters|December 27, 2015
Density and Phonon-Stiffness Anomalies of Water and Ice in the Full Temperature RangeChang Q Sun, Xi Zhang, Xiaojian Fu, et al.
Scientific Reports|September 10, 2015
Ice Regelation: Hydrogen-bond extraordinary recoverability and water quasisolid-phase-boundary dispersivityXi Zhang, Yongli Huang, Peng Sun, et al.
Physical Review Letters|December 15, 2023
Unconventional Polarization-Switching Mechanism in (Hf, Zr)O_{2} Ferroelectrics and Its ImplicationsYao Wu, Yuke Zhang, Jie Jiang, et al.
Nano Letters|October 20, 2025
Persistent Ferroelectric Retention of Ferroelectric BiFeO<sub>3</sub> Thin FilmsYu Tian, Jiajia Liao, Yuxin Fan, et al.
Nanoscale Research Letters|July 28, 2019
Memory Window and Endurance Improvement of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-Based FeFETs with ZrO<sub>2</sub> Seed Layers Characterized by Fast Voltage Pulse MeasurementsWenwu Xiao, Chen Liu, Yue Peng, et al.
ACS Applied Materials & Interfaces|November 1, 2022
Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO<sub>2</sub>-Based Ferroelectric Field-Effect TransistorsSiwei Dai, Qijun Yang, Binjian Zeng, et al.
Pageof 5

Showing results (21-30 of 41) with videos related to

Sort By:
Pageof 5
Scientific Reports|October 22, 2013
Size, separation, structural order, and mass density of molecules packing in water and iceYongli Huang, Xi Zhang, Zengsheng Ma, et al.
Physical Chemistry Chemical Physics : PCCP|September 26, 2014
Hydrogen-bond memory and water-skin supersolidity resolving the Mpemba paradoxXi Zhang, Yongli Huang, Zengsheng Ma, et al.
Chemistry (Weinheim an Der Bergstrasse, Germany)|June 22, 2013
Facile synthesis of transition-metal oxide nanocrystals embedded in hollow carbon microspheres for high-rate lithium-ion-battery anodesJun Liu, Wei Liu, Kunfeng Chen, et al.
Chemistry (Weinheim an Der Bergstrasse, Germany)|December 17, 2013
Enhancing the electrochemical performance of the LiMn(2)O(4) hollow microsphere cathode with a LiNi(0.5)Mn(1.5)O(4) coated layerWei Liu, Jun Liu, Kunfeng Chen, et al.
The Journal of Physical Chemistry Letters|December 27, 2015
Density and Phonon-Stiffness Anomalies of Water and Ice in the Full Temperature RangeChang Q Sun, Xi Zhang, Xiaojian Fu, et al.
Scientific Reports|September 10, 2015
Ice Regelation: Hydrogen-bond extraordinary recoverability and water quasisolid-phase-boundary dispersivityXi Zhang, Yongli Huang, Peng Sun, et al.
Physical Review Letters|December 15, 2023
Unconventional Polarization-Switching Mechanism in (Hf, Zr)O_{2} Ferroelectrics and Its ImplicationsYao Wu, Yuke Zhang, Jie Jiang, et al.
Nano Letters|October 20, 2025
Persistent Ferroelectric Retention of Ferroelectric BiFeO<sub>3</sub> Thin FilmsYu Tian, Jiajia Liao, Yuxin Fan, et al.
Nanoscale Research Letters|July 28, 2019
Memory Window and Endurance Improvement of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-Based FeFETs with ZrO<sub>2</sub> Seed Layers Characterized by Fast Voltage Pulse MeasurementsWenwu Xiao, Chen Liu, Yue Peng, et al.
ACS Applied Materials & Interfaces|November 1, 2022
Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO<sub>2</sub>-Based Ferroelectric Field-Effect TransistorsSiwei Dai, Qijun Yang, Binjian Zeng, et al.
Pageof 5