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Nanotechnology|February 11, 2022
A review on III-V compound semiconductor short wave infrared avalanche photodiodesYan Liang, Chandrasekar Perumal Veeramalai, Guochen Lin, et al.
Nanoscale|November 2, 2019
Control of electron tunnelling by fine band engineering of semiconductor potential barriersYunhao Zhao, Chenyuan Cai, Yi Zhang, et al.
Nanoscale Research Letters|December 8, 2022
Promotion of Specific Single-Transverse-Mode Beam Characteristics for GaSb-Based Narrow Ridge Waveguide Lasers via Customized Parameter DesignTianfang Wang, Chengao Yang, Yihang Chen, et al.
Nanoscale|August 9, 2017
Quantum efficiency optimization by maximizing wave function overlap in type-II superlattice photodetectorsYunhao Zhao, Lu Liu, Han Bi, et al.
Nanotechnology|July 8, 2022
Fine modulation of the energy band strategy to control the carrier confinement capability of digital alloysQingchen Cao, Yuyang Wu, Yunhao Zhao, et al.
Optics Express|October 20, 2023
Robust design of mid-infrared GaSb-based single-mode laser diode fabricated by standard photolithography with socketed ridge-waveguide modulationHongguang Yu, Chengao Yang, Yihang Chen, et al.
ACS Applied Materials & Interfaces|August 3, 2017
Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb SuperlatticeHan Bi, Xi Han, Lu Liu, et al.
Optics Express|July 2, 2026
High-speed InGaAs/GaAsSb type-II superlattice avalanche photodiodes beyond 2 µmWenyang Wang, Yan Liang, Rongshu Guan, et al.
Small (Weinheim an Der Bergstrasse, Germany)|April 25, 2019
Heterointerface-Driven Band Alignment Engineering and its Impact on Macro-Performance in Semiconductor Multilayer NanostructuresChenyuan Cai, Yunhao Zhao, Shengwen Xie, et al.
ACS Applied Materials & Interfaces|June 3, 2021
Insights into Growth-Oriented Interfacial Modulation within Semiconductor MultilayersYuyang Wu, Yi Zhang, Yunhao Zhao, et al.
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