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Scientific Reports|February 14, 2015
Gate tunable relativistic mass and Berry's phase in topological insulator nanoribbon field effect devicesLuis A Jauregui, Michael T Pettes, Leonid P Rokhinson, et al.Nature Communications|February 14, 2020
Vapor-liquid-solid growth of large-area multilayer hexagonal boron nitride on dielectric substratesZhiyuan Shi, Xiujun Wang, Qingtian Li, et al.Nature Nanotechnology|April 12, 2017
Position-dependent and millimetre-range photodetection in phototransistors with micrometre-scale graphene on SiCBiddut K Sarker, Edward Cazalas, Ting-Fung Chung, et al.The Journal of Chemical Physics|March 23, 2015
Formation of ultracold (7)Li(85)Rb molecules in the lowest triplet electronic state by photoassociation and their detection by ionization spectroscopyAdeel Altaf, Sourav Dutta, John Lorenz, et al.Optics Letters|August 2, 2018
Stable emission and fast optical modulation of quantum emitters in boron nitride nanotubesJonghoon Ahn, Zhujing Xu, Jaehoon Bang, et al.Scientific Reports|May 10, 2014
Quantum and classical magnetoresistance in ambipolar topological insulator transistors with gate-tunable bulk and surface conductionJifa Tian, Cuizu Chang, Helin Cao, et al.Physical Review Letters|September 26, 2012
Quantized Hall effect and Shubnikov-de Haas oscillations in highly doped Bi2Se3: evidence for layered transport of bulk carriersHelin Cao, Jifa Tian, Ireneusz Miotkowski, et al.Physical Review Letters|October 13, 2007
Pinning modes and interlayer correlation in high-magnetic-field bilayer Wigner solidsZhihai Wang, Yong P Chen, L W Engel, et al.ACS Nano|January 24, 2018
Large Enhancement of Thermal Conductivity and Lorenz Number in Topological Insulator Thin FilmsZhe Luo, Jifa Tian, Shouyuan Huang, et al.Advanced Materials (Deerfield Beach, Fla.)|August 11, 2022
Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic, and Optical PropertiesYaping Qi, Mohammad A Sadi, Dan Hu, et al.Pageof 12