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Micromachines|February 25, 2022
Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH<sub>4</sub> PlasmaKi Seok Kim, You-Jin Ji, Ki-Hyun Kim, et al.
Scientific Reports|May 28, 2017
Atomic layer etching of graphene through controlled ion beam for graphene-based electronicsKi Seok Kim, You Jin Ji, Yeonsig Nam, et al.
Scientific Reports|October 21, 2017
Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma SourceKi Seok Kim, Ki Hyun Kim, You Jin Ji, et al.
ACS Applied Materials & Interfaces|June 3, 2023
Plasma Enhanced Atomic Layer Deposition of Silicon Nitride for Two Different Aminosilane Precursors Using Very High Frequency (162 MHz) Plasma SourceYou Jin Ji, Hae In Kim, Seung Yup Choi, et al.
Nanotechnology|March 24, 2024
Plasma enhanced atomic layer deposition of silicon nitride using magnetized very high frequency plasmaYou Jin Ji, Hae In Kim, Ji Eun Kang, et al.
Nature Communications|October 18, 2019
Ultrasensitive MoS<sub>2</sub> photodetector by serial nano-bridge multi-heterojunctionKi Seok Kim, You Jin Ji, Ki Hyun Kim, et al.
Nanotechnology|August 2, 2023
Highly selective etching of SiN<sub>x</sub>over SiO<sub>2</sub>using ClF<sub>3</sub>/Cl<sub>2</sub>remote plasmaSeong Jae Yoo, Ji Eun Kang, You Jin Ji, et al.
ACS Nano|June 3, 2021
Impact of 2D-3D Heterointerface on Remote Epitaxial Interaction through GrapheneHyunseok Kim, Kuangye Lu, Yunpeng Liu, et al.
Nature Nanotechnology|March 21, 2023
High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer processHyunseok Kim, Yunpeng Liu, Kuangye Lu, et al.
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