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Journal of Physics. Condensed Matter : an Institute of Physics Journal|October 22, 2019
X-ray spectroscopy study on the electronic structure of Sn-added p-type SnO filmsAhmed Yousef Mohamed, Seung Jun Lee, Younjin Jang, et al.Nanotechnology|February 9, 2018
In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memoryEun Suk Hwang, Jun Shik Kim, Seok Min Jeon, et al.ACS Applied Materials & Interfaces|September 5, 2025
Enhancement of On-Current and Reliability in InGaZnO Thin-Film Transistors for Synaptic Circuit Applications through Gate Insulator Stack EngineeringNarae Han, Youngchae Roh, Ha-Jun Sung, et al.Scientific Reports|December 27, 2024
Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistorsDonguk Kim, Dayeon Lee, Wonjung Kim, et al.ACS Applied Materials & Interfaces|January 16, 2025
Modeling of Composition and Channel Length-Dependent Transient Characteristics in Short-Channel IGZO Field-Effect TransistorsDonguk Kim, Dayeon Lee, Wonjung Kim, et al.ACS Applied Materials & Interfaces|January 12, 2018
Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p-Type Oxide SemiconductorSeung Jun Lee, Younjin Jang, Han Joon Kim, et al.Pageof 1