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Optics Express|August 6, 2020
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivationBongkwon Son, Yiding Lin, Kwang Hong Lee, et al.
Optics Express|February 25, 2022
Grating and hole-array enhanced germanium lateral p-i-n photodetectors on an insulator platformHao Zhou, Qimiao Chen, Shaoteng Wu, et al.
Optics Express|November 10, 2016
Epitaxy and characterization of GaInP/AlInP light-emitting diodes on As-doped Ge/Si substratesCong Wang, Bing Wang, Kwang Hong Lee, et al.
Nanoscale|February 22, 2023
Wafer-scale nanostructured black silicon with morphology engineering via advanced Sn-assisted dry etching for sensing and solar cell applicationsShaoteng Wu, Qimiao Chen, Lin Zhang, et al.
Optics Express|August 10, 2017
Opto-impedance spectroscopy and equivalent circuit analyses of AC powder electroluminescent devicesShuai Zhang, Chuan Seng Tan, Terence Kin Shun Wong, et al.
Optics Letters|July 30, 2021
GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 µm and 1.55 µm optical communication bandsQimiao Chen, Shaoteng Wu, Lin Zhang, et al.
Optics Express|April 6, 2021
Surface plasmon enhanced GeSn photodetectors operating at 2 µmHao Zhou, Lin Zhang, Jinchao Tong, et al.
ACS Applied Materials & Interfaces|March 12, 2026
High-Performance Flexible Ultraviolet Phototransistor Based on an AlGaN/GaN Heterojunction MembraneRamit Kumar Mondal, Zhongshu Xiong, Zhiying Chen, et al.
Optics Letters|March 1, 2024
High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic-photonic integrated circuits at telecommunication wavelengthsTzu-Yang Huang, Radhika Bansal, Soumava Ghosh, et al.
ACS Nano|June 23, 2023
A Route toward High-Detectivity and Low-Cost Short-Wave Infrared Photodetection: GeSn/Ge Multiple-Quantum-Well Photodetectors with a Dielectric Nanohole Array MetasurfaceQimiao Chen, Hao Zhou, Shengqiang Xu, et al.
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