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Optics Letters|April 29, 2017
Sn-based waveguide p-i-n photodetector with strained GeSn/Ge multiple-quantum-well active layerYu-Hui Huang, Guo-En Chang, Hui Li, et al.Optics Letters|July 30, 2021
Temperature-dependent characteristics of GeSn/Ge multiple-quantum-well photoconductors on siliconKuan-Chih Lin, Po-Rei Huang, Hui Li, et al.Optics Express|August 10, 2016
Tensile-strained Ge/SiGe quantum-well photodetectors on silicon substrates with extended infrared responseGuo-En Chang, Shao-Wei Chen, H H ChengOptics Letters|March 16, 2018
GeSn resonant-cavity-enhanced photodetectors on silicon-on-insulator platformsBo-Jun Huang, Jun-Han Lin, H H Cheng, et al.Optics Letters|February 29, 2020
Silicon-based high-responsivity GeSn short-wave infrared heterojunction phototransistors with a floating baseWei-Ting Hung, Devesh Barshilia, Rikmantra Basu, et al.Optics Letters|March 13, 2020
GeSn resonant-cavity-enhanced photodetectors for efficient photodetection at the 2 µm wavelength bandCheng-Hsun Tsai, Bo-Jun Huang, Richard A Soref, et al.Optics Letters|February 12, 2021
GeSn lateral p-i-n waveguide photodetectors for mid-infrared integrated photonicsCheng-Hsun Tsai, Kuan-Chih Lin, Chin-Yuan Cheng, et al.Optics Letters|July 1, 2021
Planar GeSn lateral p-i-n resonant-cavity-enhanced photodetectors for short-wave infrared integrated photonicsChen-Yang Chang, Radhika Bansal, Kuo-Chih Lee, et al.Nanotechnology|May 21, 2021
Raman scattering study of GeSn under 〈1 0 0〉 and 〈1 1 0〉 uniaxial stressShu An, Yeh-Chen Tai, Kuo-Chih Lee, et al.Sensors (Basel, Switzerland)|February 24, 2024
Theoretical Analysis of GeSn Quantum Dots for Photodetection ApplicationsPin-Hao Lin, Soumava Ghosh, Guo-En ChangPageof 1,979