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Micromachines|June 28, 2023
AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO2 as Passivation and Dielectric LayersYu-Shyan Lin, Chi-Che LuMaterials (Basel, Switzerland)|January 25, 2025
Dye-Sensitized Solar Cells with Modified TiO2 Scattering Layer Produced by Hydrothermal MethodYu-Shyan Lin, Wei-Hung ChenMicromachines|December 30, 2020
Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility TransistorsYu-Shyan Lin, Shin-Fu LinOptics Express|June 25, 2009
Optical characterization of a GaAs/In(0.5)(AlxGa(1-x))(0.5)P/GaAs heterostructure cavity by piezoreflectance spectroscopyChing-Hwa Ho, Ji-Han Li, Yu-Shyan LinOptics Express|June 5, 2009
Practical photoluminescence and photoreflectance spectroscopic system for optical characterization of semiconductor devicesChing-Hwa Ho, Kuo-Wei Huang, Yu-Shyan Lin, et al.Pageof 1