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Yuanhao Miao

Showing results (1-10 of 23) with videos related to

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Materials (Basel, Switzerland)|August 24, 2019
High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-temperature Magnetron Sputtering for Optoelectronic ApplicationJiayin Yang, Huiyong Hu, Yuanhao Miao, et al.
Nanomaterials (Basel, Switzerland)|August 27, 2025
Ternary Logic Design Based on Novel Tunneling-Drift-Diffusion Field-Effect TransistorsBin Lu, Hua Qiang, Dawei Wang, et al.
Nanoscale|July 10, 2023
Indium doping-assisted monolayer Ga<sub>2</sub>O<sub>3</sub> exfoliation for performance-enhanced MOSFETsPenghui Li, Linpeng Dong, Chong Li, et al.
Nanoscale Advances|September 22, 2022
Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxyLiming Wang, Yichi Zhang, Hao Sun, et al.
ACS Applied Materials & Interfaces|October 17, 2022
First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer Ga<sub>2</sub>O<sub>3</sub>Yueyang Ma, Linpeng Dong, Penghui Li, et al.
Nanomaterials (Basel, Switzerland)|March 10, 2022
Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) SiliconYong Du, Buqing Xu, Guilei Wang, et al.
Nanomaterials (Basel, Switzerland)|May 14, 2022
Investigation of the Integration of Strained Ge Channel with Si-Based FinFETsBuqing Xu, Guilei Wang, Yong Du, et al.
Nanomaterials (Basel, Switzerland)|March 13, 2026
Optimization of Strain and Doping in Ge/GeSi Nanoscale Multilayers for GOI Short-Wave Infrared Imaging ApplicationsXuewei Zhao, Yuanhao Miao, Jiale Su, et al.
Sensors (Basel, Switzerland)|January 11, 2025
Review of Short-Wavelength Infrared Flip-Chip Bump Bonding Process TechnologyJunhao Du, Xuewei Zhao, Jiale Su, et al.
Nanomaterials (Basel, Switzerland)|March 13, 2026
Low-Defect Bulk-Germanium-on-Insulator Photodetectors with Resonant Cavity Enhancement at 1550 nm for High-Resolution SWIR ImagingJiale Su, Ben Li, Yuhui Ren, et al.
Pageof 3

Showing results (1-10 of 23) with videos related to

Sort By:
Pageof 3
Materials (Basel, Switzerland)|August 24, 2019
High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-temperature Magnetron Sputtering for Optoelectronic ApplicationJiayin Yang, Huiyong Hu, Yuanhao Miao, et al.
Nanomaterials (Basel, Switzerland)|August 27, 2025
Ternary Logic Design Based on Novel Tunneling-Drift-Diffusion Field-Effect TransistorsBin Lu, Hua Qiang, Dawei Wang, et al.
Nanoscale|July 10, 2023
Indium doping-assisted monolayer Ga<sub>2</sub>O<sub>3</sub> exfoliation for performance-enhanced MOSFETsPenghui Li, Linpeng Dong, Chong Li, et al.
Nanoscale Advances|September 22, 2022
Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxyLiming Wang, Yichi Zhang, Hao Sun, et al.
ACS Applied Materials & Interfaces|October 17, 2022
First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer Ga<sub>2</sub>O<sub>3</sub>Yueyang Ma, Linpeng Dong, Penghui Li, et al.
Nanomaterials (Basel, Switzerland)|March 10, 2022
Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) SiliconYong Du, Buqing Xu, Guilei Wang, et al.
Nanomaterials (Basel, Switzerland)|May 14, 2022
Investigation of the Integration of Strained Ge Channel with Si-Based FinFETsBuqing Xu, Guilei Wang, Yong Du, et al.
Nanomaterials (Basel, Switzerland)|March 13, 2026
Optimization of Strain and Doping in Ge/GeSi Nanoscale Multilayers for GOI Short-Wave Infrared Imaging ApplicationsXuewei Zhao, Yuanhao Miao, Jiale Su, et al.
Sensors (Basel, Switzerland)|January 11, 2025
Review of Short-Wavelength Infrared Flip-Chip Bump Bonding Process TechnologyJunhao Du, Xuewei Zhao, Jiale Su, et al.
Nanomaterials (Basel, Switzerland)|March 13, 2026
Low-Defect Bulk-Germanium-on-Insulator Photodetectors with Resonant Cavity Enhancement at 1550 nm for High-Resolution SWIR ImagingJiale Su, Ben Li, Yuhui Ren, et al.
Pageof 3