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Materials (Basel, Switzerland)
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August 24, 2019
High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-temperature Magnetron Sputtering for Optoelectronic Application
Jiayin Yang, Huiyong Hu, Yuanhao Miao, et al.
Nanomaterials (Basel, Switzerland)
|
August 27, 2025
Ternary Logic Design Based on Novel Tunneling-Drift-Diffusion Field-Effect Transistors
Bin Lu, Hua Qiang, Dawei Wang, et al.
Nanoscale
|
July 10, 2023
Indium doping-assisted monolayer Ga<sub>2</sub>O<sub>3</sub> exfoliation for performance-enhanced MOSFETs
Penghui Li, Linpeng Dong, Chong Li, et al.
Nanoscale Advances
|
September 22, 2022
Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxy
Liming Wang, Yichi Zhang, Hao Sun, et al.
ACS Applied Materials & Interfaces
|
October 17, 2022
First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer Ga<sub>2</sub>O<sub>3</sub>
Yueyang Ma, Linpeng Dong, Penghui Li, et al.
Nanomaterials (Basel, Switzerland)
|
March 10, 2022
Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon
Yong Du, Buqing Xu, Guilei Wang, et al.
Nanomaterials (Basel, Switzerland)
|
May 14, 2022
Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs
Buqing Xu, Guilei Wang, Yong Du, et al.
Nanomaterials (Basel, Switzerland)
|
March 13, 2026
Optimization of Strain and Doping in Ge/GeSi Nanoscale Multilayers for GOI Short-Wave Infrared Imaging Applications
Xuewei Zhao, Yuanhao Miao, Jiale Su, et al.
Sensors (Basel, Switzerland)
|
January 11, 2025
Review of Short-Wavelength Infrared Flip-Chip Bump Bonding Process Technology
Junhao Du, Xuewei Zhao, Jiale Su, et al.
Nanomaterials (Basel, Switzerland)
|
March 13, 2026
Low-Defect Bulk-Germanium-on-Insulator Photodetectors with Resonant Cavity Enhancement at 1550 nm for High-Resolution SWIR Imaging
Jiale Su, Ben Li, Yuhui Ren, et al.
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Search research articles
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Showing results (1-10 of 23) with videos related to
Sort By:
Page
of 3
Materials (Basel, Switzerland)
|
August 24, 2019
High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-temperature Magnetron Sputtering for Optoelectronic Application
Jiayin Yang, Huiyong Hu, Yuanhao Miao, et al.
Nanomaterials (Basel, Switzerland)
|
August 27, 2025
Ternary Logic Design Based on Novel Tunneling-Drift-Diffusion Field-Effect Transistors
Bin Lu, Hua Qiang, Dawei Wang, et al.
Nanoscale
|
July 10, 2023
Indium doping-assisted monolayer Ga<sub>2</sub>O<sub>3</sub> exfoliation for performance-enhanced MOSFETs
Penghui Li, Linpeng Dong, Chong Li, et al.
Nanoscale Advances
|
September 22, 2022
Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxy
Liming Wang, Yichi Zhang, Hao Sun, et al.
ACS Applied Materials & Interfaces
|
October 17, 2022
First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer Ga<sub>2</sub>O<sub>3</sub>
Yueyang Ma, Linpeng Dong, Penghui Li, et al.
Nanomaterials (Basel, Switzerland)
|
March 10, 2022
Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon
Yong Du, Buqing Xu, Guilei Wang, et al.
Nanomaterials (Basel, Switzerland)
|
May 14, 2022
Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs
Buqing Xu, Guilei Wang, Yong Du, et al.
Nanomaterials (Basel, Switzerland)
|
March 13, 2026
Optimization of Strain and Doping in Ge/GeSi Nanoscale Multilayers for GOI Short-Wave Infrared Imaging Applications
Xuewei Zhao, Yuanhao Miao, Jiale Su, et al.
Sensors (Basel, Switzerland)
|
January 11, 2025
Review of Short-Wavelength Infrared Flip-Chip Bump Bonding Process Technology
Junhao Du, Xuewei Zhao, Jiale Su, et al.
Nanomaterials (Basel, Switzerland)
|
March 13, 2026
Low-Defect Bulk-Germanium-on-Insulator Photodetectors with Resonant Cavity Enhancement at 1550 nm for High-Resolution SWIR Imaging
Jiale Su, Ben Li, Yuhui Ren, et al.
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of 3