Showing results (11-20 of 23) with videos related to

Sort By:
Pageof 3
Nanomaterials (Basel, Switzerland)|September 12, 2025
Convergence of Thermistor Materials and Focal Plane Arrays in Uncooled Microbolometers: Trends and PerspectivesBo Wang, Xuewei Zhao, Tianyu Dong, et al.
Optics Express|March 18, 2026
High-performance Ge-on-insulator photodetector enabled by thick Ge spacer and tensile-strained GeSi/Ge multiple quantum wellsJunhao Du, Xuewei Zhao, Yuanhao Miao, et al.
Nanomaterials (Basel, Switzerland)|August 12, 2022
Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on SiliconBuqing Xu, Guilei Wang, Yong Du, et al.
Nanomaterials (Basel, Switzerland)|April 30, 2021
High Performance p-i-n Photodetectors on Ge-on-Insulator PlatformXuewei Zhao, Guilei Wang, Hongxiao Lin, et al.
Nanomaterials (Basel, Switzerland)|October 23, 2021
Review of Si-Based GeSn CVD Growth and Optoelectronic ApplicationsYuanhao Miao, Guilei Wang, Zhenzhen Kong, et al.
Materials (Basel, Switzerland)|May 28, 2022
Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual SubstrateBuqing Xu, Yong Du, Guilei Wang, et al.
Optics Letters|May 15, 2024
High-performance GeSi/Ge multi-quantum well photodetector on a Ge-buffered Si substrateHe Wang, Zhenzhen Kong, Xinguang Tan, et al.
Nanomaterials (Basel, Switzerland)|April 30, 2021
Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVDYong Du, Zhenzhen Kong, Muhammet S Toprak, et al.
Nanomaterials (Basel, Switzerland)|February 11, 2023
Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral RegionYuanhao Miao, Hongxiao Lin, Ben Li, et al.
Nanomaterials (Basel, Switzerland)|June 2, 2021
Strain Modulation of Selectively and/or Globally Grown Ge LayersYong Du, Guilei Wang, Yuanhao Miao, et al.
Pageof 3