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Yuefei Cai

Showing results (1-10 of 12) with videos related to

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Optics Express|February 7, 2018
Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: commentYuefei Cai
Optics Letters|May 1, 2025
Monolithic integration of p-MOSFETs with micro-LEDs on the same GaN LED epiHongping Liu, Ran Zhang, Yuefei Cai
Optics Letters|July 14, 2018
Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxyChao Liu, Yuefei Cai, Huaxing Jiang, et al.
Optics Express|January 5, 2024
Integration of large-extinction-ratio resonators with grating couplers and waveguides on GaN-on-sapphire at O-bandYuefei Cai, Kaiyi Wu, Zhipeng Ma, et al.
ACS Applied Materials & Interfaces|May 7, 2020
Nonpolar (112̅0) GaN Metal-Semiconductor-Metal Photodetectors with Superior Performance on SiliconYuefei Cai, Shuoheng Shen, Chenqi Zhu, et al.
ACS Photonics|April 17, 2020
A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs)Jie Bai, Yuefei Cai, Peng Feng, et al.
ACS Applied Electronic Materials|February 22, 2021
Direct Epitaxial Approach to Achieve a Monolithic On-Chip Integration of a HEMT and a Single Micro-LED with a High-Modulation BandwidthYuefei Cai, Jack I H Haggar, Chenqi Zhu, et al.
ACS Nano|May 27, 2020
Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line WidthJie Bai, Yuefei Cai, Peng Feng, et al.
ACS Applied Electronic Materials|September 9, 2020
High Modulation Bandwidth of Semipolar (11-22) InGaN/GaN LEDs with Long Wavelength EmissionJack Ih Haggar, Yuefei Cai, Suneal S Ghataora, et al.
Materials (Basel, Switzerland)|October 17, 2018
Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional Al<sub>x</sub>Ga<sub>1-x</sub>N LayersYuefei Cai, Chenqi Zhu, Ling Jiu, et al.
Pageof 2

Showing results (1-10 of 12) with videos related to

Sort By:
Pageof 2
Optics Express|February 7, 2018
Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: commentYuefei Cai
Optics Letters|May 1, 2025
Monolithic integration of p-MOSFETs with micro-LEDs on the same GaN LED epiHongping Liu, Ran Zhang, Yuefei Cai
Optics Letters|July 14, 2018
Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxyChao Liu, Yuefei Cai, Huaxing Jiang, et al.
Optics Express|January 5, 2024
Integration of large-extinction-ratio resonators with grating couplers and waveguides on GaN-on-sapphire at O-bandYuefei Cai, Kaiyi Wu, Zhipeng Ma, et al.
ACS Applied Materials & Interfaces|May 7, 2020
Nonpolar (112̅0) GaN Metal-Semiconductor-Metal Photodetectors with Superior Performance on SiliconYuefei Cai, Shuoheng Shen, Chenqi Zhu, et al.
ACS Photonics|April 17, 2020
A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs)Jie Bai, Yuefei Cai, Peng Feng, et al.
ACS Applied Electronic Materials|February 22, 2021
Direct Epitaxial Approach to Achieve a Monolithic On-Chip Integration of a HEMT and a Single Micro-LED with a High-Modulation BandwidthYuefei Cai, Jack I H Haggar, Chenqi Zhu, et al.
ACS Nano|May 27, 2020
Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line WidthJie Bai, Yuefei Cai, Peng Feng, et al.
ACS Applied Electronic Materials|September 9, 2020
High Modulation Bandwidth of Semipolar (11-22) InGaN/GaN LEDs with Long Wavelength EmissionJack Ih Haggar, Yuefei Cai, Suneal S Ghataora, et al.
Materials (Basel, Switzerland)|October 17, 2018
Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional Al<sub>x</sub>Ga<sub>1-x</sub>N LayersYuefei Cai, Chenqi Zhu, Ling Jiu, et al.
Pageof 2