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Micromachines|January 23, 2024
Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band ApplicationsMing-Wen Lee, Cheng-Wei Chuang, Francisco Gamiz, et al.
Micromachines|May 27, 2023
Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band ApplicationsMing-Wen Lee, Yueh-Chin Lin, Heng-Tung Hsu, et al.
Materials (Basel, Switzerland)|November 13, 2021
Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave ApplicationsChun Wang, Yu-Chiao Chen, Heng-Tung Hsu, et al.
Materials (Basel, Switzerland)|February 15, 2022
A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking LayerYou-Chen Weng, Yueh-Chin Lin, Heng-Tung Hsu, et al.
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