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Nanotechnology|October 18, 2023
Resistive switching modulation by incorporating thermally enhanced layer in HfO2-based memristorXing Li, Zhe Feng, Jianxun Zou, et al.
Physical Chemistry Chemical Physics : PCCP|August 22, 2023
Electrostatic gating dependent multiple band alignments in ferroelectric VS2/Ga2O3 van der Waals heterostructuresYunlai Zhu, Zihan Qu, Xiaoteng Wang, et al.
Physical Chemistry Chemical Physics : PCCP|May 18, 2023
Robust ferroelectricity in low-dimensional δ-SiX (X = S/Se): a first-principles studyYuehua Dai, Xiaoteng Wang, Xiuquan Fang, et al.
Physical Chemistry Chemical Physics : PCCP|January 22, 2024
Janus monolayer PXC (X = As/Sb) for photocatalytic water splitting with a negative Poisson's ratioYunlai Zhu, Shuo Jiang, Jishun Zhang, et al.
Physical Chemistry Chemical Physics : PCCP|January 22, 2024
First-principles prediction of ferroelectric Janus Si2XY (X/Y = S/Se/Te, X ≠ Y) monolayers with negative Poisson's ratiosYunlai Zhu, Zihan Qu, Jishun Zhang, et al.
Neural Networks : the Official Journal of the International Neural Network Society|February 20, 2025
Memristor-based circuit design of interweaving mechanism of emotional memory in a hippocamp-brain emotion learning modelYunlai Zhu, Yongjie Zhao, Junjie Zhang, et al.
Nanotechnology|November 11, 2025
Artificial nociceptor with Pt/NbOx/Graphene memristive deviceYuehua Dai, Zhihao Lin, Haochen Wang, et al.
Nanotechnology|January 26, 2026
Optimizing the analog synaptic characteristics of memristors by regulating the distribution of barrier layersYunlai Zhu, Ying Zhu, Junjie Zhang, et al.
Nanotechnology|August 29, 2024
A linear compensation method for inference accuracy improvement of memristive in-memory computingYuehua Dai, Zeqing Wang, Zhe Feng, et al.
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